发明授权
- 专利标题: Method of forming transparent and conductive ultrathin films
- 专利标题(中): 形成透明导电超薄膜的方法
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申请号: US608673申请日: 1996-02-29
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公开(公告)号: US5804255A公开(公告)日: 1998-09-08
- 发明人: Masato Kiuchi , Akiyoshi Chayahara
- 申请人: Masato Kiuchi , Akiyoshi Chayahara
- 申请人地址: JPX Tokyo
- 专利权人: Agency of Industrial Science and Technology
- 当前专利权人: Agency of Industrial Science and Technology
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX5-210929 19930802
- 主分类号: C03C17/09
- IPC分类号: C03C17/09 ; C03C17/22 ; C04B41/50 ; C04B41/51 ; C04B41/87 ; C04B41/88 ; C08J7/06 ; C23C14/00 ; C23C14/02 ; C23C14/06 ; C23C14/18 ; C23C14/20 ; C23C14/22 ; G02F1/1343 ; H01J29/86 ; H01J29/88 ; B05D3/06 ; B05D5/06
摘要:
The invention provides a method of producing tranparent and conductive ultrathin films of metal carbide or metal nitride on a glass, ceramics or organic polymer substrate, which comprises the steps of exciting a surface of said substrate by irradiating said surface with a carbon or nitrogen ion beam; simultaneously vapor-depositing a transition metal onto said surface to form a carbide or nitride layer; and terminating the excitation and the vapor-deposition when the thickness of the metal carbide or nitride layer is in the range of 1 nm to 50 nm, and the light permeability of the metal carbide or nitride layer is in the range of 30% to 90%, wherein the conductivity of the metal carbide or nitride layer is in the range of 1 k.OMEGA./.quadrature. To 100 k.OMEGA./.quadrature..
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