发明授权
- 专利标题: Semiconductor device and method of farbricating the same
- 专利标题(中): 半导体器件及其制造方法
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申请号: US594947申请日: 1996-01-31
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公开(公告)号: US5811872A公开(公告)日: 1998-09-22
- 发明人: Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
- 申请人: Katsuyuki Machida , Katsumi Murase , Nobuhiro Shimoyama , Toshiaki Tsuchiya , Junichi Takahashi , Kazushige Minegishi , Yasuo Takahashi , Hideo Namatsu , Kazuo Imai
- 申请人地址: JPX
- 专利权人: Nippon Telegraph and Telephone Corporation
- 当前专利权人: Nippon Telegraph and Telephone Corporation
- 当前专利权人地址: JPX
- 主分类号: H01L21/3105
- IPC分类号: H01L21/3105 ; H01L21/316 ; H01L21/768 ; H01L23/532 ; H01L23/58
摘要:
A semiconductor device includes an interlevel film constituted by a first dielectrics film containing dangling bonds and a bonded group of Si and hydrogen, and a second dielectrics film formed on the first dielectrics film.
公开/授权文献
- US5149967A Charged-particle beam apparatus 公开/授权日:1992-09-22