发明授权
US5822256A Method and circuitry for usage of partially functional nonvolatile memory
失效
用于部分功能非易失性存储器的方法和电路
- 专利标题： Method and circuitry for usage of partially functional nonvolatile memory
- 专利标题（中）： 用于部分功能非易失性存储器的方法和电路
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申请号： US811194申请日： 1997-03-05
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公开(公告)号： US5822256A公开(公告)日： 1998-10-13
- 发明人: Mark E. Bauer , Steven Wells , David M. Brown , Johnny Javanifard , Sherif Sweha , Robert N. Hasbun , Gary J. Gallagher , Mamun Rashid , Rodney R. Rozman , Glen Hawk , George Blanchard , Mark Winston , Richard D. Pashley
- 申请人： Mark E. Bauer , Steven Wells , David M. Brown , Johnny Javanifard , Sherif Sweha , Robert N. Hasbun , Gary J. Gallagher , Mamun Rashid , Rodney R. Rozman , Glen Hawk , George Blanchard , Mark Winston , Richard D. Pashley
- 申请人地址： CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： G11C11/56
- IPC分类号： G11C11/56 ; G11C29/00 ; G11C29/44 ; G11C7/00
摘要：
A method and circuitry are described that permit one to utilize a partially functional integrated circuit memory. A memory array is segregated into separate blocks that can each be isolated to minimize the amount of the memory array rendered unusable by a defect. Circuitry is also provided to program memory cells within the array to one of at least three amounts of charge and thereby increase the amount of storage provided by the remaining functional blocks.
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