摘要:
A system is disclosed for centralized management of access permissions to specific devices on client terminals using a group policy framework. The system identifies a unique device identifier for a specific device, and allows policy to be set for the specific device based on identifying the specific device by its unique device identifier.
摘要:
A method and device for providing hidden storage in non-volatile memory. A memory device is disclosed comprising a main flash array. A hidden storage area is connected to the main flash array. The hidden storage area can not be accessed without a valid password according to the present memory device.
摘要:
A method wherein a special programming mode of a memory is entered. The special programming mode disables internal verification by the memory. The memory includes automation circuitry for program verification. A plurality of words is programmed into the memory without the memory performing internal program verification. A host processor verifies external to the memory the programming of the plurality of data words into the memory. The special programming mode is exited and internal program verification by the memory is enabled. An apparatus is also described having a host processor and a memory with special programming mode circuitry.
摘要:
A memory module including a flash EEPROM memory array designed to be joined to a memory bus of a computer, BIOS processes including system status test processes stored in the array, diagnostic processes stored in the array to provide data indicating malfunctions in the computer, accessing processes stored in the array for calling the system status test processes and the diagnostic processes even though the computer fails to boot, and communication processes stored in the array for transferring results produced by the system status test processes and the diagnostic processes for use in servicing the computer.
摘要:
Methods of allocating, writing, reading, de-allocating, re-allocating, and reclaiming space within a nonvolatile memory having a bifurcated storage architecture are described. In one embodiment, a method of reliably re-allocating a first object stored within a block erasable nonvolatile memory includes the step of allocating space for a second object. A write of the second object is initiated and the writing of the second object is tracked. In another embodiment, a method of re-allocating a first object stored within a block erasable nonvolatile memory includes the step of invalidating the first object, if the first object has an unreliable type of recovery level. Space is allocated for the second object. A write of the second object is initiated and the writing of the second object is tracked. In another embodiment, a method of reliably re-allocating a first object stored within the block erasable nonvolatile memory includes the step of allocating space for the second object. A write of the second object is initiated and the writing of the second object is tracked. The first object is invalidated after completion of writing the second object, if the first object has a reliable type of recovery. In one embodiment, the first object resides within a first portion of nonvolatile memory and the instructions for performing the described methods reside in a second portion of nonvolatile memory. The first and second portions can reside within a same nonvolatile memory such as a symmetrically blocked flash electrically erasable programmable read only memory.
摘要:
A circuit for selecting a select line from a plurality of first and second select lines is described. Each of an array of integrated circuit (IC) packages is coupled to (1) one of the first select lines and (2) at least one of the second select lines. The circuit includes a decoder for decoding a select data to select the select line, and circuitry for modifying the select data before the select data is applied to the decoder when each of the second select lines is not coupled to an IC device within each of the IC packages to ensure that the select line is not one of the second select lines. When each of the first and second select lines is coupled to an IC device within each of the IC packages, the circuitry for modifying does not modify the select data. A method for selecting a selected IC device within a selected IC package of an array of IC packages is also described.
摘要:
A method and circuitry are described that permit one to utilize a partially functional integrated circuit memory. A memory array is segregated into separate blocks that can each be isolated to minimize the amount of the memory array rendered unusable by a defect. Circuitry is also provided to program memory cells within the array to one of at least three amounts of charge and thereby increase the amount of storage provided by the remaining functional blocks.
摘要:
A method for performing multiple writes before an erase to a nonvolatile memory cell is described. A first bit is stored at a first level of a nonvolatile memory cell. A second bit is stored at a second level of the nonvolatile memory cell. A method of erasing a nonvolatile memory cell is described. A level indicator that indicates the next level of the nonvolatile memory cell to write to is incremented. A method of reading a nonvolatile memory cell includes recalling a level indicator. The nonvolatile memory cell is then sensed at a level indicated by the level indicator to determine the state of the memory cell.
摘要:
A memory contains a plurality of memory cells that are capable of storing one or more bits of data in each memory cell. The memory stores, in response to a write operation, data corresponding to the write operation in a first set of the memory cells such that each cell of the first set of the memory cells stores a single bit. Thereafter, data from the first set of memory cells are transferred to a second set of the memory cells such that each cell of the second set of the memory cells stores more than a single bit of data. The write operation to the first set of cells is executed in a foreground operation, and in a subsequent background operation, data from the first set of memory cells are transferred to the second set of memory cells. The memory cells are non-volatile flash electrically erasable programmable read only memory (EEPROM) cells, and therefore require erasure before programming. Typically, memory cells are reclaimed in a background operation. However, if not enough memory cells are available for a write operation, then a set of memory cells are reclaimed in a foreground operation, and more than one bit of the data are stored in the reclaimed memory cells.
摘要:
A solid state memory disk with increased reserve memory is described. The solid state memory disk includes an array of solid state memory devices for storing user data and reserve memory, which includes both free memory and dirty memory. The solid state memory disk also includes a controller, a clean-up state machine, and a data compressor. The data compressor increases reserve memory by compressing data received from a host and coupling compressed data to the array of memory devices under the control of the controller. In response to write commands from the host, the controller writes a first sector data, which has been compressed, to a first location in a first block within a memory device. Reserve memory within the array is thus increased, so long as the maximum number of sectors the host is allowed to write is less the average compression ratio of the data compressor multiplied by the capacity of the solid state disk. A method of increasing reserve memory in a solid state disk is also described.