发明授权
- 专利标题: Large area uniform ion beam formation
- 专利标题(中): 大面积均匀的离子束形成
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申请号: US756656申请日: 1996-11-26
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公开(公告)号: US5825038A公开(公告)日: 1998-10-20
- 发明人: Julian G. Blake , Kenneth H. Purser , Adam A. Brailove , Peter H. Rose , Barbara J. Hughey
- 申请人: Julian G. Blake , Kenneth H. Purser , Adam A. Brailove , Peter H. Rose , Barbara J. Hughey
- 申请人地址: OH Cleveland
- 专利权人: Eaton Corporation
- 当前专利权人: Eaton Corporation
- 当前专利权人地址: OH Cleveland
- 主分类号: H01J37/30
- IPC分类号: H01J37/30 ; H01J37/317
摘要:
A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion chamber generating a stream of ions, a plasma electrode having an elongated slot with a high aspect ratio for shaping the stream of ions into a ribbon beam, and an electrode assembly for directing the stream of ions towards a workpiece. The plasma electrode can include a split extraction system having a plurality of elongated slots oriented substantially parallel to each other. The ion implantation system can also have a diffusing system for homogenizing the ion stream. Various exemplary diffusing systems include an apertured plate having an array of openings, diffusing magnets, diffusing electrodes, and dithering magnets.
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