Large area uniform ion beam formation
    1.
    发明授权
    Large area uniform ion beam formation 失效
    大面积均匀的离子束形成

    公开(公告)号:US5825038A

    公开(公告)日:1998-10-20

    申请号:US756656

    申请日:1996-11-26

    IPC分类号: H01J37/30 H01J37/317

    摘要: A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion chamber generating a stream of ions, a plasma electrode having an elongated slot with a high aspect ratio for shaping the stream of ions into a ribbon beam, and an electrode assembly for directing the stream of ions towards a workpiece. The plasma electrode can include a split extraction system having a plurality of elongated slots oriented substantially parallel to each other. The ion implantation system can also have a diffusing system for homogenizing the ion stream. Various exemplary diffusing systems include an apertured plate having an array of openings, diffusing magnets, diffusing electrodes, and dithering magnets.

    摘要翻译: 快速有效地处理大量平板显示器的高通量离子注入系统。 离子注入系统具有产生离子流的离子室,具有用于将离子流成形为带状束的高纵横比的细长槽的等离子体电极,以及用于将离子流引向工件的电极组件 。 等离子体电极可以包括具有基本上彼此平行取向的多个细长狭缝的分离提取系统。 离子注入系统还可以具有用于使离子流均匀化的扩散系统。 各种示例性扩散系统包括具有开口阵列,扩散磁体,扩散电极和抖动磁体的有孔板。

    Technique for manufacturing bit patterned media
    7.
    发明授权
    Technique for manufacturing bit patterned media 有权
    技术制造位图案媒体

    公开(公告)号:US09093104B2

    公开(公告)日:2015-07-28

    申请号:US13342762

    申请日:2012-01-03

    IPC分类号: B44C1/22 G11B5/855

    CPC分类号: G11B5/855

    摘要: A novel technique for manufacturing bit patterned media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing bit pattern media. The technique, which may be realized as a method comprising: forming a non-catalysis region on a first portion of a catalysis layer; forming a non-magnetic separator on the non-catalysis region; and forming a magnetic active region on a second portion of the catalysis layer adjacent to the first portion of the catalysis layer.

    摘要翻译: 公开了一种用于制造位图案化介质的新型技术。 在一个特定的示例性实施例中,该技术可以被实现为用于制造钻头图案介质的方法。 该技术可以被实现为一种方法,包括:在催化层的第一部分上形成非催化区; 在非催化区上形成非磁性分离器; 以及在催化层的与催化层的第一部分相邻的第二部分上形成磁性活性区域。

    Pressurized treatment of substrates to enhance cleaving process
    8.
    发明授权
    Pressurized treatment of substrates to enhance cleaving process 失效
    加压处理底物以增强切割过程

    公开(公告)号:US08466039B2

    公开(公告)日:2013-06-18

    申请号:US13399637

    申请日:2012-02-17

    IPC分类号: H01L21/30

    CPC分类号: H01L21/76254 Y10S438/977

    摘要: A method of cleaving a substrate is disclosed. A species, such as hydrogen or helium, is implanted into a substrate to form a layer of microbubbles. The substrate is then annealed a pressure greater than atmosphere. This annealing may be performed in the presence of the species that was implanted. This diffuses the species into the substrate. The substrate is then cleaved along the layer of microbubbles. Other steps to form an oxide layer or to bond to a handle also may be included.

    摘要翻译: 公开了一种切割基板的方法。 将诸如氢或氦的物质植入衬底中以形成微泡层。 然后将衬底退火,压力大于大气压。 该退火可以在植入物种的存在下进行。 这将物种扩散到基质中。 然后沿着微泡层切割底物。 可以包括形成氧化物层或结合到手柄的其它步骤。

    Cooled cleaving implant
    9.
    发明授权
    Cooled cleaving implant 有权
    冷却切割植入物

    公开(公告)号:US08329260B2

    公开(公告)日:2012-12-11

    申请号:US12181516

    申请日:2008-07-29

    摘要: A substrate is implanted with a species to form a layer of microbubbles in the substrate. The species may be hydrogen or helium in some embodiments. The size at which the microbubbles are stable within the substrate is controlled. In one example, this is by cooling the substrate. In one embodiment, the substrate is cooled to approximately between −150° C. and 30° C. This cooling also may reduce diffusion of the species in the substrate and will reduce surface roughness when the substrate is cleaved along the layer of microbubbles.

    摘要翻译: 植入衬底以在衬底中形成微泡层。 在一些实施方案中,该物质可以是氢或氦。 微泡在基底内稳定的尺寸受到控制。 在一个实例中,这是通过冷却衬底。 在一个实施方案中,将基底冷却至约-150℃至30℃。该冷却还可以减少物质在基底中的扩散,并且当沿着微泡层切割基底时将降低表面粗糙度。