发明授权
US5834159A Image reversal technique for forming small structures in integrated
circuits
失效
用于在集成电路中形成小结构的图像反转技术
- 专利标题: Image reversal technique for forming small structures in integrated circuits
- 专利标题(中): 用于在集成电路中形成小结构的图像反转技术
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申请号: US635988申请日: 1996-04-22
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公开(公告)号: US5834159A公开(公告)日: 1998-11-10
- 发明人: Andre Stolmeijer
- 申请人: Andre Stolmeijer
- 申请人地址: CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: CA Sunnyvale
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L21/027 ; H01L21/033 ; H01L21/28 ; H01L21/311 ; G03F7/00
摘要:
The present invention provides a method for fabricating small structures to be employed in integrated circuits formed on a semiconductor substrate. Examples of such small structures include contacts, vias, and metal lines. The method of the present invention employs an image reversal technique to obtain improved feature definition. In forming a feature in a layer of material, a clear field reticle is used to form patterned segments of photoresist each having a size, a shape, and a location substantially identical to the size, the shape, and the location of one of the features intended to be formed in the layer of material. This method is employed instead of using a dark field reticle which forms windows in a photoresist each having a size, a shape, and a location substantially identical to the size, the shape, and the location of one of the features intended to be formed in the layer of material. For small structures, the openings or windows in a photoresist are harder to form than the patterned segments of photoresist. With the method of the present invention which employs a clear field reticle to form a mask comprising patterned segments of photoresist, the limitations of patterning small windows in a photoresist with the use of a dark field reticle are avoided. The accuracy of forming the small structures is thus improved.
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