发明授权
- 专利标题： Method for manufacturing a semiconductor device having a ferroelectric capacitor
- 专利标题（中）： 具有铁电电容器的半导体器件的制造方法
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申请号： US738470申请日： 1996-10-30
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公开(公告)号： US5834348A公开(公告)日： 1998-11-10
- 发明人: Kee-Won Kwon , Chang-Seok Kang
- 申请人： Kee-Won Kwon , Chang-Seok Kang
- 申请人地址： KRX Seoul
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX Seoul
- 优先权： KRX963/93 19930127
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/822 ; H01L21/8242 ; H01L21/8246 ; H01L21/8247 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L21/00 ; H01L21/20
摘要：
In a semiconductor device having a ferroelectric capacitor and manufacturing method thereof, a spacer comprising a low dielectric constant material is formed on the side surfaces of a plurality of lower electrodes separated into each cell unit, and a ferroelectric film is formed on the lower electrodes whereon the low dielectric constant material spacer is formed, and an upper electrode is formed on the ferroelectric film, to thereby prevent an error which may be caused between the adjacent lower electrodes.
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