- 专利标题： Deep trench with enhanced sidewall surface area
-
申请号： US784558申请日： 1997-01-21
-
公开(公告)号： US5849638A公开(公告)日： 1998-12-15
- 发明人: Herbert Lei Ho , David Edward Kotecki , Carl John Radens
- 申请人： Herbert Lei Ho , David Edward Kotecki , Carl John Radens
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/02 ; H01L21/762 ; H01L21/822 ; H01L21/8242 ; H01L27/108 ; H01L21/302
摘要：
The present invention includes a method and system to increase the deep trench sidewall surface area in a storage node on a DRAM chip. By tilting the trenches the capacitance is increased without taking up more space on the semiconductor chip.
公开/授权文献
- US5237323A Map retrieving system having a learning function 公开/授权日：1993-08-17
信息查询
IPC分类:
