发明授权
US5858825A Methods for reducing anomalous narrow channel effect in trench-bounded
buried-channel p-MOSFETS
失效
在沟槽有限的埋沟p-MOSFET中减少异常窄通道效应的方法
- 专利标题: Methods for reducing anomalous narrow channel effect in trench-bounded buried-channel p-MOSFETS
- 专利标题(中): 在沟槽有限的埋沟p-MOSFET中减少异常窄通道效应的方法
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申请号: US893053申请日: 1997-07-14
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公开(公告)号: US5858825A公开(公告)日: 1999-01-12
- 发明人: Johann Alsmeier , Jack Allan Mandelman
- 申请人: Johann Alsmeier , Jack Allan Mandelman
- 申请人地址: DEX Munich NY Armonk
- 专利权人: Siemens Aktiengesellschaft,International Business Machines Corporation
- 当前专利权人: Siemens Aktiengesellschaft,International Business Machines Corporation
- 当前专利权人地址: DEX Munich NY Armonk
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234 ; H01L21/8242 ; H01L27/092 ; H01L29/06 ; H01L29/10 ; H01L29/78 ; H01L21/8238
摘要:
Methods of manufacturing trench-bounded buried-channel p-type metal oxide semiconductor field effect transistors (p-MOSFETs), as used in dynamic random access memory (DRAM) technologies, for significantly reducing the anomalous buried-channel p-MOSFET sensitivity to device width. In one embodiment, the method comprises the initiation of a low temperature annealing step using an inert gas after the deep phosphorous n-well implant step, and prior to the boron buried-channel implant and 850.degree. C. gate oxidation steps. Alternatively, the annealing step may be performed after the boron buried-channel implant and prior to the 850.degree. C. gate oxidation step. In another embodiment, a rapid thermal oxidation (RTO) step is substituted for the 850.degree. C. gate oxidation step, following the deep phosphorous n-well and boron buried-channel implant steps. Alternatively, an 850.degree. C. gate oxidation step may follow the RTO gate oxidation step.
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