发明授权
US5863307A Method and slurry composition for chemical-mechanical polish (CMP)
planarizing of copper containing conductor layers
失效
含铜导体层的化学机械抛光（CMP）平面化的方法和浆料组成
- 专利标题： Method and slurry composition for chemical-mechanical polish (CMP) planarizing of copper containing conductor layers
- 专利标题（中）： 含铜导体层的化学机械抛光（CMP）平面化的方法和浆料组成
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申请号： US80804申请日： 1998-05-18
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公开(公告)号： US5863307A公开(公告)日： 1999-01-26
- 发明人: Mei Sheng Zhou , Ron-Fu Chu
- 申请人： Mei Sheng Zhou , Ron-Fu Chu
- 申请人地址： SGX Singapore
- 专利权人： Chartered Semiconductor Manufacturing, Ltd.
- 当前专利权人： Chartered Semiconductor Manufacturing, Ltd.
- 当前专利权人地址： SGX Singapore
- 主分类号： C09K3/14
- IPC分类号： C09K3/14 ; H01L21/321 ; H01L21/768 ; B24D3/34
摘要：
A Chemical-Mechanical Polish (CMP) planarizing method and a Chemical-Mechanical Polish (CMP) slurry composition for Chemical-Mechanical Polish (CMP) planarizing of copper metal and copper metal alloy layers within integrated circuits. There is first provided a semiconductor substrate having formed upon its surface a patterned substrate layer. Formed within and upon the patterned substrate layer is a blanket copper metal layer or a blanket copper metal alloy layer. The blanket copper metal layer or blanket copper metal alloy layer is then planarized through a Chemical-Mechanical Polish (CMP) planarizing method employing a Chemical-Mechanical Polish (CMP) slurry composition. The Chemical-Mechanical Polish (CMP) slurry composition comprises a non-aqueous coordinating solvent and a halogen radical producing specie.
公开/授权文献
- USD409885S Shovel 公开/授权日：1999-05-18
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