发明授权
US5864574A Semiconductor gain medium with a light Divergence region that has a
patterned resistive region
失效
具有具有图案化电阻区域的光发散区域的半导体增益介质
- 专利标题： Semiconductor gain medium with a light Divergence region that has a patterned resistive region
- 专利标题（中）： 具有具有图案化电阻区域的光发散区域的半导体增益介质
-
申请号： US624282申请日： 1996-03-29
-
公开(公告)号： US5864574A公开(公告)日： 1999-01-26
- 发明人: David F. Welch , David G. Mehuys , Donald R. Scifres
- 申请人： David F. Welch , David G. Mehuys , Donald R. Scifres
- 申请人地址： CA San Jose
- 专利权人： SDL, Inc.
- 当前专利权人： SDL, Inc.
- 当前专利权人地址： CA San Jose
- 主分类号： H01S3/081
- IPC分类号： H01S3/081 ; H01S3/23 ; H01S5/026 ; H01S5/042 ; H01S5/0625 ; H01S5/065 ; H01S5/10 ; H01S5/12 ; H01S5/125 ; H01S5/14 ; H01S5/18 ; H01S5/187 ; H01S5/20 ; H01S5/40 ; H01S5/50 ; H01S3/19 ; H01S3/00
摘要：
A semiconductor gain medium has an active gain region with a partially patterned radiation diverging region. The partially patterned radiation diverging region may be created with spatial resistive regions formed in a portion of the radiation diverging region having a narrower width than in other portions of the diverging region where the propagating radiation has a greater width. The gain region may be an amplifier or, in addition to the amplifier, may include a resonator cavity, or operate as an unstable resonator.
公开/授权文献
- US4556695A Process for the degradation of (co)polymers of propylene 公开/授权日：1985-12-03
信息查询
