发明授权
- 专利标题： Gas sensor and method for fabricating same
- 专利标题（中）： 气体传感器及其制造方法
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申请号： US548387申请日： 1995-10-26
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公开(公告)号： US5866800A公开(公告)日： 1999-02-02
- 发明人: Hyeon Soo Park , Hyun Woo Shin , Chul Han Kwon , Hyung Ki Hong , Dong Hyun Yun , Kyuchung Lee , Sung Tae Kim
- 申请人： Hyeon Soo Park , Hyun Woo Shin , Chul Han Kwon , Hyung Ki Hong , Dong Hyun Yun , Kyuchung Lee , Sung Tae Kim
- 申请人地址： KRX Chungcheongbuk-Do
- 专利权人： LG Semicon Co., Ltd.
- 当前专利权人： LG Semicon Co., Ltd.
- 当前专利权人地址： KRX Chungcheongbuk-Do
- 优先权： KRX27489/1994 19941026
- 主分类号： G01N27/00
- IPC分类号： G01N27/00 ; G01N27/12 ; G01N27/26
摘要：
A gas sensor and a method for fabricating the same includes a semiconductor substrate, a supporting layer formed on the semiconductor substrate, the supporting layer being electrically insulative and having a pattern groove formed therein, a heater formed in the pattern groove, an electrically insulating layer formed on the heater and the supporting layer, an electrode formed on the insulating layer, and a sensing layer formed on the electrode and the insulating layer to detect a target gas of interest according to a measured change in electrical conductivity or resistance thereof.
公开/授权文献
- US4530736A Method for manufacturing Fresnel phase reversal plate lenses 公开/授权日：1985-07-23
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