发明授权
- 专利标题: Semiconductor structure ladder network configuration
- 专利标题(中): 半导体结构梯形网络配置
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申请号: US782777申请日: 1997-01-13
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公开(公告)号: US5872504A公开(公告)日: 1999-02-16
- 发明人: Norbert Greitschus , Hans-Gunter Zimmer
- 申请人: Norbert Greitschus , Hans-Gunter Zimmer
- 申请人地址: DEX Freiburg
- 专利权人: Deutsche ITT Industries, GmbH
- 当前专利权人: Deutsche ITT Industries, GmbH
- 当前专利权人地址: DEX Freiburg
- 优先权: DEX19601135.3 19960113
- 主分类号: H01L27/04
- IPC分类号: H01L27/04 ; H01L21/822 ; H01L27/08 ; H01C1/01
摘要:
A semiconductor structure for creating resistor networks, particularly ladder networks, has resistive sections made of semiconductor material and metal contact areas. A continuous semiconducting resistor strip is provided as a primary arm. Along this continuous primary arm, metal contact areas which contact the resistor strip at the side are provided in accordance with the desired resistor ratio and in order to form corresponding series resistors. In a ladder network, shunt arms have one end connected directly to the long side of the primary arm via the semiconductor material. At the other end of each of the shunt arms, a respective metal contact area is provided.
公开/授权文献
- US5164807A Charge-coupled devices with locally widened electrodes 公开/授权日:1992-11-17
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