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公开(公告)号：US5872504A
公开(公告)日：1999-02-16
申请号：US782777
申请日：1997-01-13
IPC分类号： H01L27/04 , H01L21/822 , H01L27/08 , H01C1/01
CPC分类号： H01L27/0802
摘要： A semiconductor structure for creating resistor networks, particularly ladder networks, has resistive sections made of semiconductor material and metal contact areas. A continuous semiconducting resistor strip is provided as a primary arm. Along this continuous primary arm, metal contact areas which contact the resistor strip at the side are provided in accordance with the desired resistor ratio and in order to form corresponding series resistors. In a ladder network, shunt arms have one end connected directly to the long side of the primary arm via the semiconductor material. At the other end of each of the shunt arms, a respective metal contact area is provided.
摘要翻译： 用于产生电阻网络，特别是梯形网络的半导体结构具有由半导体材料和金属接触区域制成的电阻部分。 提供连续的半导体电阻条作为主臂。 沿着该连续的主臂，根据期望的电阻比率提供与侧面上的电阻器条接触的金属接触区域，以便形成相应的串联电阻器。 在梯形网络中，分流臂的一端通过半导体材料直接连接到主臂的长边。 在每个分流臂的另一端处，设置相应的金属接触区域。
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2.发明授权
公开(公告)号：US6066895A
公开(公告)日：2000-05-23
申请号：US539783
申请日：1995-10-05
申请人： Hans-Gunter Zimmer
发明人： Hans-Gunter Zimmer
IPC分类号： H01L23/522 , H01L21/768 , H01L23/528 , H01L23/532 , H01L23/29 , H01L23/52 , H01L29/40
CPC分类号： H01L23/5283 , H01L23/53271 , H01L2924/0002
摘要： An interconnecting structure for a semiconductor integrated circuit and a method for manufacturing said interconnecting structure. The interconnecting structure comprises a top layer, a bottom layer, and a dielectric isolation layer. The top layer completely covers and encloses the bottom layer. The dielectric isolation layer is disposed between the top layer and the bottom layer. At least one contact opening is formed through the top layer of the structure, thereby exposing a selected region of said bottom layer. A contact is formed on the selected region of the bottom layer.
摘要翻译： 一种用于半导体集成电路的互连结构和用于制造所述互连结构的方法。 互连结构包括顶层，底层和介电隔离层。 顶层完全覆盖并包围底层。 介电隔离层设置在顶层和底层之间。 通过结构的顶层形成至少一个接触开口，从而暴露所述底层的选定区域。 在底层的选定区域上形成接触。
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