发明授权
US5874327A Fabricating a semiconductor device using precursor CMOS semiconductor
substrate of a given configuration
失效
使用给定配置的前驱CMOS半导体衬底制造半导体器件
- 专利标题： Fabricating a semiconductor device using precursor CMOS semiconductor substrate of a given configuration
- 专利标题（中）： 使用给定配置的前驱CMOS半导体衬底制造半导体器件
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申请号： US711283申请日： 1996-09-09
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公开(公告)号： US5874327A公开(公告)日： 1999-02-23
- 发明人: Michael D. Rostoker , Nicholas F. Pasch
- 申请人： Michael D. Rostoker , Nicholas F. Pasch
- 申请人地址： CA Milpitas
- 专利权人： LSI Logic Corporation
- 当前专利权人： LSI Logic Corporation
- 当前专利权人地址： CA Milpitas
- 主分类号： H01L21/266
- IPC分类号： H01L21/266 ; H01L21/3105 ; H01L21/8238
摘要：
Methods of planarizing one or more layers having an irregular top surface topology in a semiconductor device based on an underlying MOS structure are disclosed. Methods of creating doped wells or regions for the underlying MOS structure are also disclosed, using thick oxide growths on the surface of the substrate to mask implantation of ions into the wells. A technique for creating a pair of adjacent complementary oppositely-doped wells, such as for a CMOS structure, using a thick oxide growths as a mask is also disclosed. One of the methods of planarizing the one or more layers involves depositing, densifying and re-flowing a layer of glass on top of the topological layer. Another method of planarizing the one or more layers involves depositing, densifying and chemical-mechanically polishing the deposited and densified glass, thereby avoiding an additional temperature cycle (i.e., for re-flowing the glass) which would adversely affect underlying diffusions.
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