发明授权
- 专利标题： Method of forming wiring structure of semiconductor device
- 专利标题（中）： 形成半导体器件布线结构的方法
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申请号： US770158申请日： 1996-12-19
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公开(公告)号： US5874357A公开(公告)日： 1999-02-23
- 发明人: Young-Kwon Jun , Yong-Kwon Kim
- 申请人： Young-Kwon Jun , Yong-Kwon Kim
- 申请人地址： KRX Choongcheongbuk-Do
- 专利权人： LG Semicon Co., Ltd.
- 当前专利权人： LG Semicon Co., Ltd.
- 当前专利权人地址： KRX Choongcheongbuk-Do
- 优先权： KRX1995/67324 19951229
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/311 ; H01L21/768 ; H01L23/522 ; H01L21/4763
摘要：
A wiring structure of a semiconductor device includes a substrate; a first conductive layer formed in the substrate; an insulation film formed on the substrate including the first conductive layer and having a contact hole therein through which the upper surface of the first conductive layer is exposed, wherein the contact hole includes an upper contact hole and a lower contact hole having a shape undercut into the insulation film and thus being wider than the upper contact hole; and a second conductive layer formed on the insulation film so as to thoroughly fill the contact hole and electrically connected to the first conductive layer.
公开/授权文献
- US5213013A Line pressure control system for automatic transmission 公开/授权日：1993-05-25
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