Invention Grant
- Patent Title: Method of treating a semi-conductor wafer
- Patent Title (中): 处理半导体晶片的方法
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Application No.: US362429Application Date: 1994-12-28
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Publication No.: US5874367APublication Date: 1999-02-23
- Inventor: Christopher David Dobson
- Applicant: Christopher David Dobson
- Applicant Address: GBX Gwent
- Assignee: Trikon Technologies Limited
- Current Assignee: Trikon Technologies Limited
- Current Assignee Address: GBX Gwent
- Priority: GBX9214243 19920704; GBX9221519 19921014; GBX9221520 19921014
- Main IPC: H01L21/316
- IPC: H01L21/316 ; B05D7/24 ; H01L21/00 ; H01L21/312 ; B05D3/06
Abstract:
A wafer processing method relates to treating a semi-conductor wafer and in particular, but not exclusively, to planarization. The method consists of depositing a liquid short-chain polymer formed from a silicon containing gas or vapor. Subsequently water and OH are removed and the layer is stabilised.
Public/Granted literature
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