公开(公告)号：US07309662B1

公开(公告)日：2007-12-18

申请号：US09763641

申请日：2000-06-26

Applicant: Katherine Giles ,  Knut Beekmann ,  Christopher David Dobson ,  John MacNeil ,  Antony Paul Wilby

Inventor： Katherine Giles ,  Knut Beekmann ,  Christopher David Dobson ,  John MacNeil ,  Antony Paul Wilby

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31604 ,  H01L21/31612

Abstract: This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapor form a silicon containing organic compound and an oxidizing agent in the presence of a plasma to deposit a film on the substrate and setting the film such that carbon containing groups are retained therein. In particular embodiments the setting is achieved by exposing the film to H2 plasma.

Abstract translation: 本发明涉及一种在基片上形成薄膜的方法和装置。 该方法包括在等离子体存在下以气态或蒸气形式将含硅的有机化合物和氧化剂供应到室中，以将膜沉积在基材上并使膜固化以使含碳基团保留在其中。 在具体实施方案中，通过将膜暴露于H 2 O 3等离子体来实现设定。

公开(公告)号：US06824699B2

公开(公告)日：2004-11-30

申请号：US10438876

申请日：2003-05-16

Applicant: Christopher David Dobson

Inventor： Christopher David Dobson

IPC: C23F100

CPC classification number: H01L21/31138 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76882

Abstract: This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapour and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapour and/or oxygen.

Abstract translation: 本发明涉及一种加热绝缘层的方法，例如在半导体器件中发现的方法，其中已经通过抗蚀剂层蚀刻形成层，所述抗蚀剂层包括反应性蚀刻抗蚀剂，抑制吸收或除去水蒸气和/或氧的水分 在没有所述水蒸汽和/或氧的情况下，蚀刻的地层的暴露表面和用导电金属填充地层。

公开(公告)号：US06592770B1

公开(公告)日：2003-07-15

申请号：US09554290

申请日：2000-05-11

Applicant: Christopher David Dobson

Inventor： Christopher David Dobson

IPC: B44C122

CPC classification number: H01L21/31138 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76882

Abstract: This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapor and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapor and/or oxygen.

Abstract translation: 本发明涉及一种加热绝缘层的方法，例如在半导体器件中发现的方法，其中已经通过抗蚀剂层蚀刻形成层，所述抗蚀剂层包括反应性蚀刻抗蚀剂，抑制吸收或除去水蒸气和/或氧的水分 在没有所述水蒸汽和/或氧的情况下，蚀刻的地层的暴露表面和用导电金属填充地层。

公开(公告)号：US06169027A

公开(公告)日：2001-01-02

申请号：US08975449

申请日：1997-11-21

Applicant: Christopher David Dobson

Inventor： Christopher David Dobson

IPC: H01L2144

CPC classification number: H01L21/76856 ,  C23C14/58 ,  C23C14/5826 ,  C23C14/5853 ,  C23C14/586 ,  H01L21/28512 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76882

Abstract: The invention consists in a method of filling recesses in a surface layer of a workpiece with conductive material including the steps of: forming a barrier layer on the surface; depositing a layer of conductive material on to the barrier layer; and forcing, flowing or drifting the conductive material into the recesses characterized in that the barrier layer includes Oxygen or is oxidized and oxidized material in the surface of the layer is nitrided prior to the deposition of the conductive material.

Abstract translation: 本发明包括一种用导电材料填充工件的表面层中的凹陷的方法，包括以下步骤：在表面上形成阻挡层;在导电层上沉积导电材料层;以及迫使，流动或漂移 导电材料进入凹陷，其特征在于阻挡层包括氧气，或者在沉积导电材料之前，在层的表面中被氧化和氧化的材料被氮化。

公开(公告)号：US06287989B1

公开(公告)日：2001-09-11

申请号：US09174578

申请日：1998-10-19

Applicant: Christopher David Dobson

Inventor： Christopher David Dobson

IPC: H01L2131

CPC classification number: H01L21/67017 ,  B05D1/60 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/31604 ,  H01L21/31612 ,  Y10S438/935

Abstract: A semiconductor wafer is treated in a chamber by introducing into the chamber a silicon-containing gas or vapor and hydrogen peroxide in vapor form. The silicon-containing gas or vapor is reacted with the hydrogen peroxide to form a short chain, inorganic fluid polymer on the wafer, which thus forms a generally planar layer.

Abstract translation: 通过向腔室中引入含硅气体或蒸气和蒸汽形式的过氧化氢，在腔室中处理半导体晶片。 含硅气体或蒸气与过氧化氢反应，从而在晶片上形成短链无机流体聚合物，从而形成大致平面的层。

公开(公告)号：US5932289A

公开(公告)日：1999-08-03

申请号：US831600

申请日：1997-04-10

Applicant: Christopher David Dobson ,  Arthur John McGeown

Inventor： Christopher David Dobson ,  Arthur John McGeown

IPC: H01L21/00 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  H05K3/40 ,  B05D5/12 ,  B05D3/02

CPC classification number: H01L21/76843 ,  H01L21/3105 ,  H01L21/32115 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76819 ,  H01L21/76841 ,  H01L21/76882 ,  H05K3/4084 ,  H05K2201/0355 ,  H05K2203/0278 ,  H05K2203/1105 ,  Y10T428/2457

Abstract: A deposit layer is deposited on the exposed surface of a surface layer formed on a semiconductor wafer. The depositing of the deposit layer continues at least until the deposit layer extends over all the recesses to close completely the openings of all of the recesses to thereby form enclosed areas within the recesses which are devoid of a material of the deposit layer. After forming the enclosed areas within the recesses, the wafer and the deposit layer are then subjected to pressure and heat treatment sufficient to cause parts of the deposit layer to deform to fill the enclosed areas within the respective recesses.

Abstract translation: 沉积层沉积在形成在半导体晶片上的表面层的暴露表面上。 沉积层的沉积至少继续直到沉积层在所有凹部上延伸以完全闭合所有凹部的开口，从而在凹陷内形成没有沉积层材料的封闭区域。 在凹槽内形成封闭区域之后，然后对晶片和沉积层进行足够的压力和热处理，使沉积层的一部分变形以填充相应凹槽内的封闭区域。

公开(公告)号：US5874367A

公开(公告)日：1999-02-23

申请号：US362429

申请日：1994-12-28

Applicant: Christopher David Dobson

Inventor： Christopher David Dobson

IPC: H01L21/316 ,  B05D7/24 ,  H01L21/00 ,  H01L21/312 ,  B05D3/06

CPC classification number: H01L21/67017 ,  B05D1/60 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/02362 ,  H01L21/3121 ,  H01L21/31604 ,  H01L21/31612 ,  Y10S438/935

Abstract: A wafer processing method relates to treating a semi-conductor wafer and in particular, but not exclusively, to planarization. The method consists of depositing a liquid short-chain polymer formed from a silicon containing gas or vapor. Subsequently water and OH are removed and the layer is stabilised.

Abstract translation: PCT No.PCT / GB93 / 01368 Sec。 371日期1994年12月28日第 102（e）日期1994年12月28日PCT提交1993年6月30日PCT公布。 公开号WO94 / 01885 日期1994年1月20日晶片处理方法涉及半导体晶片的处理，具体而非排他地涉及平面化。 该方法包括沉积由含硅气体或蒸汽形成的液态短链聚合物。 随后除去水和OH，并使层稳定。

公开(公告)号：US5843535A

公开(公告)日：1998-12-01

申请号：US530195

申请日：1995-10-02

Applicant: Christopher David Dobson

Inventor： Christopher David Dobson

IPC: H01L21/28 ,  B23K20/02 ,  H01L21/00 ,  B05D3/02 ,  B05C3/00 ,  B06B1/00

CPC classification number: H01L21/67023 ,  B23K20/021 ,  H01L21/67017

Abstract: The invention relates to apparatus for use in a process in which a layer is formed on a surface of a workpiece and then forced into underlying voids. The apparatus for applying elevated pressure to the workpiece 1 comprises a chamber 103 (which includes a workpiece support 109a) means 108 for flooding the chamber 103 with liquid to immerse a workpiece 1 on the support 109a and means for applying a pulse of elevated pressure to the liquid and hence the workpiece. These means may include a liquid reservoir 102, which shares a common flexible wall 101 with the chamber 103, and electrodes 100 and 104 to which a high voltage pulse can be supplied to create a shock in the liquid of reservoir 102 which is transmitted to the liquid in 103 via the wall 101.

Abstract translation: PCT No.PCT / GB95 / 00259 Sec。 371 1995年10月2日日期 102（e）日期1995年10月2日PCT 1995年2月2日提交PCT公布。 公开号WO95 / 22170 日期1995年8月17日本发明涉及用于在工件的表面上形成层然后被迫进入下面的空隙的方法中的装置。 用于将高压施加到工件1的装置包括腔室103（其包括工件支撑件109a），用于将腔室1​​03充满液体以将工件1浸入支撑件109a的装置108和用于施加高压脉冲的装置 液体，因此工件。 这些装置可以包括液体储存器102，液体储存器102与腔室103共享共同的柔性壁101，以及电极100和104，电极100和104可以向其供应高压脉冲，以在储存器102的液体中产生冲击， 液体103经由壁101。

公开(公告)号：US06423635B1

公开(公告)日：2002-07-23

申请号：US09462465

申请日：2000-03-17

Applicant: Christopher David Dobson

Inventor： Christopher David Dobson

IPC: H01L2144

CPC classification number: H01L21/76877 ,  H01L21/321

Abstract: The invention relates to a process for filling a multiplicity of recesses (3) formed in an exposed surface of a workpiece (1), wherein the mouths of the recesses (3) are closed by the deposition of a layer (10) and the layer is subjected to elevated temperature and pressure to force material from the layer down into the recesses. In the particular embodiments described, the elevated temperature is achieved by supplying very short thermal pulses, for example, from a light source such as a laser or a halogen light and preferably this thermal pulse is applied after the elevated pressure has been achieved.

Abstract translation: 本发明涉及一种用于填充形成在工件（1）的暴露表面中的多个凹部（3）的方法，其中通过沉积层（10）将凹部（3）的口闭合，并且层 经受升高的温度和压力以迫使材料从层向下进入凹槽。 在所描述的特定实施例中，提高的温度通过例如从诸如激光或卤素光的光源提供非常短的热脉冲来实现，并且优选地，在达到升高的压力之后施加该热脉冲。

公开(公告)号：US06274245B1

公开(公告)日：2001-08-14

申请号：US09339401

申请日：1999-06-23

Applicant: Christopher David Dobson ,  Arthur John McGeown

Inventor： Christopher David Dobson ,  Arthur John McGeown

IPC: B32B1500

CPC classification number: H01L21/76843 ,  H01L21/3105 ,  H01L21/32115 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/76819 ,  H01L21/76841 ,  H01L21/76882 ,  H05K3/4084 ,  H05K2201/0355 ,  H05K2203/0278 ,  H05K2203/1105 ,  Y10T428/2457

Abstract: To fill a hole or trench structure in an article, such as a semiconductor wafer, a layer is formed on the article. The layer extends over the structure so as to seal the mouth thereof. The layer may be deposited by sputtering, etc, or the layer may be deposited as a pre-formed foil. Then, the wafer and layer are subject to elevated pressure and elevated temperature such as to cause material of the layer to flow into the structure.

Abstract translation: 为了填充诸如半导体晶片的制品中的孔或沟槽结构，在制品上形成层。 该层在结构上延伸以密封其口。 该层可以通过溅射等沉积，或者该层可以作为预成形箔而沉积。 然后，晶片和层受到升高的压力和升高的温度，例如使层的材料流入结构。