发明授权
- 专利标题： Crystal orientation detectable semiconductor substrate, and methods of manufacturing and using the same
- 专利标题（中）： 晶体取向可检测半导体衬底及其制造和使用方法
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申请号： US554509申请日： 1995-11-07
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公开(公告)号： US5876819A公开(公告)日： 1999-03-02
- 发明人: Yasuhiro Kimura , Keiji Yamauchi , Hidekazu Yamamoto , Shigehisa Yamamoto , Masafumi Katsumata , Yasukazu Mukogawa , Hajime Watanabe
- 申请人： Yasuhiro Kimura , Keiji Yamauchi , Hidekazu Yamamoto , Shigehisa Yamamoto , Masafumi Katsumata , Yasukazu Mukogawa , Hajime Watanabe
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-029378 19950217; JPX7-085719 19950411
- 主分类号： C30B33/00
- IPC分类号： C30B33/00 ; G03F9/00 ; H01L23/544 ; B32B3/02
摘要：
A semiconductor substrate with no reduction in the effective usage area and mechanical strength, and non-uniformity of the resist film thickness, and method of manufacturing and using the same are obtained. A detection mark for detecting the crystal orientation of a silicon wafer having an outer perimeter entirely of a circular contour is formed at a predetermined region of the silicon wafer. The crystal orientation of the semiconductor wafer can easily be detected with the outer perimeter still taking a circular contour. Therefore, various problems encountered in a conventional semiconductor substrate having an orientation flat or notch such as reduction in mechanical strength and effective usage area, and non-uniformity of the resist film can be circumvented.
公开/授权文献
- US4996842A Heat engine with corrugated shape memory drive belt 公开/授权日：1991-03-05
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