发明授权
- 专利标题: Sputter-deposited nickel layer
- 专利标题(中): 溅镀镍层
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申请号: US650437申请日: 1996-05-20
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公开(公告)号: US5876861A公开(公告)日: 1999-03-02
- 发明人: Ichiharu Kondo , Takao Yoneyama , Masami Yamaoka , Osamu Takenaka
- 申请人: Ichiharu Kondo , Takao Yoneyama , Masami Yamaoka , Osamu Takenaka
- 申请人地址: JPX Kariya
- 专利权人: Nippondenso Company, Ltd.
- 当前专利权人: Nippondenso Company, Ltd.
- 当前专利权人地址: JPX Kariya
- 优先权: JPX63-231653 19880915; JPX1-183502 19890714
- 主分类号: C30B28/12
- IPC分类号: C30B28/12 ; C23C14/02 ; C23C14/14 ; C23C14/16 ; C23C14/18 ; C23C14/34 ; C30B29/02 ; H01L21/28 ; H01L21/285 ; H01L29/45 ; B32B15/04
摘要:
Disclosed is a nickel layer formed on a substrate by sputtering, in which nickel layer a percent ratio of an X-ray diffraction peak intensity of the (200) plane of the nickel layer to that of the (111) plane of the nickel layer is not less than 10%. This nickel layer has a reduced stress, and therefore, lessens a bending of a substrate. The nickel layer is formed by a process for sputtering nickel on a substrate, comprising supplying an argon gas into a vacuum chamber, adjusting a pressure of the argon gas in the vacuum chamber to a predetermined value, ionizing the argon gas, bombarding a target containing nickel with the ionized argon gas, to sputter nickel atoms, and depositing the sputtered nickel atoms onto the substrate, wherein the predetermined pressure of the argon gas is not lower than 12 mTorr.
公开/授权文献
- US5148599A Mold extractor and method 公开/授权日:1992-09-22
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