- 专利标题： Gallium nitride-based III-V group compound semiconductor
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申请号： US995167申请日： 1997-12-19
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公开(公告)号： US5877558A公开(公告)日： 1999-03-02
- 发明人: Shuji Nakamura , Takao Yamada , Masayuki Senoh , Motokazu Yamada , Kanji Bando
- 申请人： Shuji Nakamura , Takao Yamada , Masayuki Senoh , Motokazu Yamada , Kanji Bando
- 申请人地址： JPX
- 专利权人： Nichia Chemical Industries, Ltd.
- 当前专利权人： Nichia Chemical Industries, Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX5-124890 19930428; JPX5-129313 19930531; JPX5-207274 19930728; JPX5-234684 19930921; JPX5-234685 19930921; JPX5-253171 19931008; JPX6-8726 19940128; JPX6-8727 19940128
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/285 ; H01L29/20 ; H01L29/72 ; H01L33/00 ; H01L33/32 ; H01L33/38 ; H01L33/40 ; H01L33/42 ; H01L33/44 ; H01S5/00 ; H01S5/042 ; H01S5/323 ; H01L29/78
摘要：
A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode is formed of a metallic material, and has been annealed.
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