发明授权
- 专利标题: Semiconductor integrated circuit
- 专利标题(中): 半导体集成电路
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申请号: US633684申请日: 1996-04-17
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公开(公告)号: US5881012A公开(公告)日: 1999-03-09
- 发明人: Toshiaki Kawasaki , Akinori Shibayama
- 申请人: Toshiaki Kawasaki , Akinori Shibayama
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electronics Corporation
- 当前专利权人: Matsushita Electronics Corporation
- 当前专利权人地址: JPX Osaka
- 优先权: JPX7-091002 19950417
- 主分类号: G11C11/413
- IPC分类号: G11C11/413 ; G11C5/14 ; G11C11/407 ; H03K17/06 ; H03K3/353
摘要:
A frequency switching circuit is controlled by a low address strobe signal XRAS. A sub-boosted power supply generating circuit is driven at a low frequency generated by a first oscillating circuit during the standby of a DRAM, and at a high frequency generated by a second oscillating circuit during the operation of the DRAM. The sub-boosted power supply generating circuit is driven in a shorter cycle during the operation than during the standby. Consequently, charges are supplied to a booster power source to boost the voltage level thereof. Accordingly, even if the period of the operation state is increased, a drop in voltage level of the boosted power supply caused by a transistor off leak current and a junction leak current can be controlled. Thus, the malfunction of a circuit can be prevented from occurring due to the drop in voltage level of the boosted power supply. The drop in voltage level of the boosted power supply can be controlled during the operation of the DRAM so that it is possible to implement a boosted power supply generating circuit which can prevent the malfunction of the circuit from occurring.
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