Invention Grant
- Patent Title: Silicon dioxide etch process which protects metal
- Patent Title (中): 保护金属的二氧化硅蚀刻工艺
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Application No.: US782531Application Date: 1997-01-10
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Publication No.: US5885477APublication Date: 1999-03-23
- Inventor: Robert T. Rasmussen , Surjit S. Chadha , David A. Cathey
- Applicant: Robert T. Rasmussen , Surjit S. Chadha , David A. Cathey
- Applicant Address: ID Boise
- Assignee: Micron Display Technology, Inc.
- Current Assignee: Micron Display Technology, Inc.
- Current Assignee Address: ID Boise
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3213 ; C09K13/04 ; C09K13/06 ; C09K13/08
Abstract:
The present invention is directed to a novel etching process for a semiconductor material which inhibits corrosion of metal comprised of pretreating the material, preferably with a surfactant, and then exposing the material to a mixture comprising salt, a buffered oxide etch, and optionally a surfactant.
Public/Granted literature
- US4625490A Tracks for fabric wall coverings Public/Granted day:1986-12-02
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