发明授权
- 专利标题： Etching material and etching process
- 专利标题（中）： 蚀刻材料和蚀刻工艺
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申请号： US800184申请日： 1997-02-13
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公开(公告)号： US5885888A公开(公告)日： 1999-03-23
- 发明人: Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara
- 申请人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX6-121954 19940511
- 主分类号： C23F1/20
- IPC分类号： C23F1/20 ; H01L21/311 ; H01L21/336 ; H01L29/423 ; H01L21/302
摘要：
An etching material comprising at least phosphoric acid, acetic acid, and nitric acid, with chromic acid added therein. Also claimed is an etching process using the etching material above, provided that the process comprises selectively etching, by using the solution, an aluminum oxide layer formed on the surface of a material containing aluminum as the principal component thereof.
公开/授权文献
- US5275451A Material handling apparatus for transporting lay-out patterns 公开/授权日：1994-01-04