发明授权
- 专利标题: Surface wave plasma processing apparatus
- 专利标题(中): 表波等离子体处理装置
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申请号: US921364申请日: 1997-08-29
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公开(公告)号: US5886473A公开(公告)日: 1999-03-23
- 发明人: Seiichi Watanabe , Masahiro Sumiya , Muneo Furuse , Hitoshi Tamura
- 申请人: Seiichi Watanabe , Masahiro Sumiya , Muneo Furuse , Hitoshi Tamura
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-231625 19960902
- 主分类号: H05H1/46
- IPC分类号: H05H1/46 ; C23C14/35 ; C23C16/50 ; C23C16/511 ; C23F4/00 ; H01J37/32 ; H01L21/027 ; H01L21/205 ; H01L21/302 ; H01L21/3065
摘要:
A coaxial passage for supplying microwaves is vertically provided over a dielectric window forming part of a processing chamber, and a conductor plate for transmitting the microwaves is arranged over the dielectric window which is positioned on the outer circumference of the coaxial passage. A microwave transmission passage can be formed between the surface of a plasma so produced as to have a critical electron density n.sub.c, and the conductor plate thereby to transmit microwaves without any reflection along the dielectric window uniformly from the center to the outer circumference.
公开/授权文献
- USRE30025E Universal double cut die set 公开/授权日:1979-06-12
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