公开(公告)号：US5886473A

公开(公告)日：1999-03-23

申请号：US921364

申请日：1997-08-29

申请人： Seiichi Watanabe ,  Masahiro Sumiya ,  Muneo Furuse ,  Hitoshi Tamura

发明人： Seiichi Watanabe ,  Masahiro Sumiya ,  Muneo Furuse ,  Hitoshi Tamura

IPC分类号： H05H1/46 ,  C23C14/35 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/027 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32238 ,  H01J37/32192

摘要： A coaxial passage for supplying microwaves is vertically provided over a dielectric window forming part of a processing chamber, and a conductor plate for transmitting the microwaves is arranged over the dielectric window which is positioned on the outer circumference of the coaxial passage. A microwave transmission passage can be formed between the surface of a plasma so produced as to have a critical electron density n.sub.c, and the conductor plate thereby to transmit microwaves without any reflection along the dielectric window uniformly from the center to the outer circumference.

摘要翻译： 用于提供微波的同轴通道垂直设置在形成处理室的一部分的电介质窗上，并且用于传输微波的导体板布置在位于同轴通道的外圆周上的电介质窗上。 可以在等离子体的表面之间形成微波传输通道，使其产生具有临界电子密度nc，并且导体板从而从中心到外周均匀地沿着电介质窗口不间断地传输微波。

公开(公告)号：US6158383A

公开(公告)日：2000-12-12

申请号：US283987

申请日：1999-04-02

申请人： Seiichi Watanabe ,  Muneo Furuse ,  Hitoshi Tamura ,  Toru Otsubo

发明人： Seiichi Watanabe ,  Muneo Furuse ,  Hitoshi Tamura ,  Toru Otsubo

IPC分类号： C23C16/511 ,  H01J37/32 ,  C23C14/00 ,  H05A1/24

CPC分类号： H01J37/32247 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32284

摘要： In a plasma processing method and apparatus, microwaves are radiated from a slot antenna set at the bottom of a resonator, a plasma is generated using the microwave and a sample is processed by the plasma. A plasma having a ring-form is generated by the microwaves radiated from the slot antennas, which are disposed at an angle which is neither in parallel to nor perpendicular to a surface current flowing on a slot antenna plate. Thereby, the sample is uniformly processed.

摘要翻译： 在等离子体处理方法和装置中，从设置在谐振器底部的缝隙天线辐射微波，使用微波产生等离子体，并且通过等离子体处理样品。 具有环形的等离子体是由从槽缝天线辐射的微波产生的，缝隙天线以与流过缝隙天线板的表面电流不平行或垂直的角度设置。 由此，将样品均匀地加工。

公开(公告)号：US06777037B2

公开(公告)日：2004-08-17

申请号：US09946626

申请日：2001-09-06

申请人： Masahiro Sumiya ,  Hitoshi Tamura ,  Seiichi Watanabe

发明人： Masahiro Sumiya ,  Hitoshi Tamura ,  Seiichi Watanabe

IPC分类号： H05H102

CPC分类号： H01J37/32192 ,  C23C16/515

摘要： A plasma processing method and apparatus are provided for processing the surface of a semiconductor device or the like through the effect of plasma. A pulsed plasma discharge is performed by switching on and off the high frequency electric power for generating the plasma with a specified off period of the plasma generation, to control an inflow amount of positive and negative charges to sparse and dense portions of device patterns and suppress an electric potential on a gate oxide film. Thereby, a highly accurate etching process with no charging damage can be carried out.

摘要翻译： 提供等离子体处理方法和装置，用于通过等离子体的作用来处理半导体器件等的表面。 通过在等离子体产生的指定的关闭周期内接通和关断用于产生等离子体的高频电力来执行脉冲等离子体放电，以将正电荷和负电荷的流入量控制在设备图案的稀疏和致密部分并抑制 栅氧化膜上的电位。 因此，可以进行不具有充电损坏的高精度蚀刻工艺。

公开(公告)号：US07029594B2

公开(公告)日：2006-04-18

申请号：US10658398

申请日：2003-09-10

申请人： Naoki Yasui ,  Masahiro Sumiya ,  Hitoshi Tamura ,  Seiichi Watanabe

发明人： Naoki Yasui ,  Masahiro Sumiya ,  Hitoshi Tamura ,  Seiichi Watanabe

IPC分类号： G01R31/00 ,  H01L21/00

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： A plasma processing method for providing plasma processing to an object to be processed disposed within a vacuum processing chamber in which a process gas feeding device feeds process gas into the vacuum processing chamber, a wafer electrode is placed within the vacuum processing chamber for mounting the object to be processed, a wafer bias power generator applies self-bias voltage to the wafer electrode, and a plasma generator generates plasma within the vacuum processing chamber. The plasma processing method flattens either a positive side voltage or a negative side voltage of a voltage waveform of a high frequency voltage generated to the object at an arbitrary voltage.

摘要翻译： 一种等离子体处理方法，用于对处理气体供给装置将处理气体进入真空处理室的真空处理室内的待处理物体进行等离子体处理，将晶片电极置于真空处理室内，以安装物体 为了进行处理，晶片偏置功率发生器对晶片电极施加自偏压，等离子体发生器在真空处理室内产生等离子体。 等离子体处理方法使在任意电压下对物体产生的高频电压的电压波形的正侧电压或负侧电压平坦化。

公开(公告)号：US07169255B2

公开(公告)日：2007-01-30

申请号：US10358894

申请日：2003-02-06

申请人： Naoki Yasui ,  Masahiro Sumiya ,  Hitoshi Tamura ,  Seiichi Watanabe

发明人： Naoki Yasui ,  Masahiro Sumiya ,  Hitoshi Tamura ,  Seiichi Watanabe

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： A plasma processing apparatus for providing plasma processing to an object placed inside a processing chamber includes a vacuum chamber, a process gas feeder feeding gas into the vacuum chamber, a wafer electrode disposed within the vacuum chamber for mounting the object, a wafer bias power generator supplying bias voltage to the wafer electrode, and a plasma generator for generating plasma within the vacuum chamber. The wafer bias power generator includes a clip circuit for clipping either a positive-side voltage or a negative-side voltage to a predetermined voltage.

摘要翻译： 一种用于向放置在处理室内的物体提供等离子体处理的等离子体处理装置包括真空室，将真空室内的气体输送到工作气体供给装置，设置在真空室内的用于安装物体的晶片电极，晶片偏置功率发生器 向晶片电极提供偏置电压，以及用于在真空室内产生等离子体的等离子体发生器。 晶片偏置功率发生器包括用于将正侧电压或负侧电压截止为预定电压的钳位电路。

公开(公告)号：US07373899B2

公开(公告)日：2008-05-20

申请号：US10954074

申请日：2004-09-30

申请人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe ,  Hitoshi Tamura

发明人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe ,  Hitoshi Tamura

IPC分类号： H01L21/00

CPC分类号： H01J37/32082 ,  C23C16/507 ,  C23C16/509 ,  C23C16/511 ,  H01J37/32183

摘要： A plasma processing apparatus having a processing chamber connected to a vacuum exhauster so that its inside pressure can be reduced by the vacuum exhauster, a gas feed unit for supplying gas into the processing chamber, a substrate electrode provided in the processing chamber and on which a sample can be placed, an RF power supply connected through a matching circuit to the substrate electrode, plasma generating means for generating plasma within the processing chamber and a voltage waveform control circuit provided within the matching circuit or between the substrate electrode and the matching circuit to flatten the voltage waveform from the RF power supply.

摘要翻译： 一种等离子体处理装置，其具有连接到真空排气器的处理室，使得其内部压力可以通过真空排气器减少;气体供给单元，用于将气体供应到处理室中;基板电极，设置在处理室中， 可以放置样品，通过匹配电路连接到基板电极的RF电源，用于在处理室内产生等离子体的等离子体产生装置和设置在匹配电路内或者在基板电极和匹配电路之间的电压波形控制电路， 平坦化RF电源的电压波形。

公开(公告)号：US20050034813A1

公开(公告)日：2005-02-17

申请号：US10954074

申请日：2004-09-30

申请人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe ,  Hitoshi Tamura

发明人： Masahiro Sumiya ,  Naoki Yasui ,  Seiichi Watanabe ,  Hitoshi Tamura

IPC分类号： C23C16/507 ,  C23C16/509 ,  C23C16/511 ,  H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32082 ,  C23C16/507 ,  C23C16/509 ,  C23C16/511 ,  H01J37/32183

摘要： A plasma processing apparatus having a processing chamber connected to a vacuum exhauster so that its inside pressure can be reduced by the vacuum exhauster, a gas feed unit for supplying gas into the processing chamber, a substrate electrode provided in the processing chamber and on which a sample can be placed, an RF power supply connected through a matching circuit to the substrate electrode, plasma generating means for generating plasma within the processing chamber and a voltage waveform control circuit provided within the matching circuit or between the substrate electrode and the matching circuit to flatten the voltage waveform from the RF power supply.

摘要翻译： 一种等离子体处理装置，其具有连接到真空排气器的处理室，使得其内部压力可以通过真空排气器减少;气体供给单元，用于将气体供应到处理室中;基板电极，设置在处理室中， 可以放置样品，通过匹配电路连接到基板电极的RF电源，用于在处理室内产生等离子体的等离子体产生装置和设置在匹配电路内或者在基板电极和匹配电路之间的电压波形控制电路， 平坦化RF电源的电压波形。

公开(公告)号：US07615132B2

公开(公告)日：2009-11-10

申请号：US10795353

申请日：2004-03-09

申请人： Naoki Yasui ,  Seiichi Watanabe ,  Masahiro Sumiya ,  Hitoshi Tamura

发明人： Naoki Yasui ,  Seiichi Watanabe ,  Masahiro Sumiya ,  Hitoshi Tamura

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32706

摘要： A plasma processing apparatus suitable for high-speed and high-definition etching is provided. By applying to a wafer chucking electrode 9 a voltage waveform in which an absolute value of high frequency voltage increases with time and switching between a positive voltage and a negative voltage occurs, a rectangular high frequency voltage is caused to be generated in the wafer 10, with the result that the duty ratio of the rectangular high frequency voltage decreases and that the high energy ion ratio in the energy distribution of ions incident on the wafer increases. Therefore, high efficiency and high accuracy etching becomes possible, providing the advantage that the material selection ratio is improved.

摘要翻译： 提供了适用于高速和高清晰刻蚀的等离子体处理装置。 通过向晶片夹持电极9施加高频电压的绝对值随着时间的推移而在正电压和负电压之间的切换的电压波形，在晶片10中产生矩形的高频电压， 结果，矩形高频电压的占空比降低，并且入射在晶片上的离子的能量分布中的高能量离子比增加。 因此，高效率和高精度蚀刻成为可能，提供了材料选择比提高的优点。

公开(公告)号：US20070186856A1

公开(公告)日：2007-08-16

申请号：US11735574

申请日：2007-04-16

申请人： NAOKI YASUI ,  Seiichi Watanabe ,  Masahiro Sumiya ,  Hitoshi Tamura

发明人： NAOKI YASUI ,  Seiichi Watanabe ,  Masahiro Sumiya ,  Hitoshi Tamura

IPC分类号： C23C16/00 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32706

摘要： The plasma processing apparatus wherein the means for applying a high frequency voltage, which becomes a voltage waveform in which a positive constant voltage and a negative constant voltage alternate with each other at given cycles, is constituted by a DC power source and a switching circuit (a chopper circuit).

摘要翻译： 等离子体处理装置，其中，用于施加高频电压的装置，其是在给定周期中成为正恒定电压和负的恒定电压彼此交替的电压波形，由直流电源和开关电路（ 斩波电路）。

公开(公告)号：US20050081999A1

公开(公告)日：2005-04-21

申请号：US10795353

申请日：2004-03-09

申请人： Naoki Yasui ,  Seiichi Watanabe ,  Masahiro Sumiya ,  Hitoshi Tamura

发明人： Naoki Yasui ,  Seiichi Watanabe ,  Masahiro Sumiya ,  Hitoshi Tamura

IPC分类号： H01J37/32 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32706

摘要： A plasma processing apparatus suitable for high-speed and high-definition etching is provided. By applying to a wafer chucking electrode 9 a voltage waveform in which an absolute value of high frequency voltage increases with time and switching between a positive voltage and a negative voltage occurs, a rectangular high frequency voltage is caused to be generated in the wafer 10, with the result that the duty ratio of the rectangular high frequency voltage decreases and that the high energy ion ratio in the energy distribution of ions incident on the wafer increases. Therefore, high efficiency and high accuracy etching becomes possible, providing the advantage that the material selection ratio is improved.

摘要翻译： 提供了适用于高速和高清晰刻蚀的等离子体处理装置。 通过向晶片夹持电极9施加高频电压的绝对值随着时间的推移而在正电压和负电压之间的切换的电压波形，在晶片10中产生矩形的高频电压， 结果，矩形高频电压的占空比降低，并且入射在晶片上的离子的能量分布中的高能量离子比增加。 因此，高效率和高精度蚀刻成为可能，提供了材料选择比提高的优点。