发明授权
- 专利标题： Apparatus for rapid thermal processing of a wafer
- 专利标题（中）： 用于晶片快速热处理的装置
-
申请号： US954791申请日： 1997-10-21
-
公开(公告)号： US5893952A公开(公告)日： 1999-04-13
- 发明人: Sheldon Aronowitz , Nicholas Eib , Jon S. Owyang
- 申请人： Sheldon Aronowitz , Nicholas Eib , Jon S. Owyang
- 申请人地址： CA Milpitas
- 专利权人： LSI Logic Corporation
- 当前专利权人： LSI Logic Corporation
- 当前专利权人地址： CA Milpitas
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/00 ; H01L21/268 ; H01L21/285 ; H01L21/316 ; H01L21/324 ; H01L21/66 ; H01L23/34 ; C23C16/00
摘要：
Rapid Thermal Processing of a semiconductor wafer is performed by scanning a laser beam across a silicon dioxide film in contact with a surface of the wafer. The silicon dioxide film absorbs the energy from the laser beam and converts the energy to heat. The heat, in turn, is transferred to the wafer. Temperature feedback can be obtained to increase control and uniformity of temperatures across the wafer.