发明授权
- 专利标题： Semiconductor device fabrication method
- 专利标题（中）： 半导体器件制造方法
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申请号： US774801申请日： 1996-12-30
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公开(公告)号： US5895258A公开(公告)日： 1999-04-20
- 发明人: Du-Heon Song
- 申请人： Du-Heon Song
- 申请人地址： KRX Choongcheongbuk-do
- 专利权人： LG Semicon Co., Ltd.
- 当前专利权人： LG Semicon Co., Ltd.
- 当前专利权人地址： KRX Choongcheongbuk-do
- 优先权： KRX95-68656 19951230
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/265 ; H01L21/76 ; H01L21/762 ; H01L21/8234 ; H01L21/8242 ; H01L27/108
摘要：
A semiconductor fabrication method for forming an insulation film and a first anti-oxidation film sequentially on a substrate which is sectioned into each of a peri region and a cell region. An active pattern is formed in the cell region and a first field ion-implanted region in a first conductive well of the cell region. Side wall spacers are formed on each side wall of the active pattern in the cell region. An active pattern is formed in the peri region by selectively etching the first anti-oxidation film and the insulation film so as to expose a certain surface portion of the peri region substrate therethrough. A first field ion-implanting region is formed in a first conductive well of the peri region by ion-implanting highly concentrated first conductive impurities through the exposed substrate and a second field ion-implanted region in a second conductive well of the peri region. Lastly, a field oxide layer created using a field oxidation process after removing the first anti-oxidation film, the insulation film and the side wall spacers. The method beings by forming a semiconductor device which eliminates double hump phenomenon, decreases leakage current and lowers stand-by current to improve the operating properties of the device.
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