发明授权
- 专利标题： Method for forming interconnection of a semiconductor device
- 专利标题（中）： 用于形成半导体器件互连的方法
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申请号： US714369申请日： 1996-09-16
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公开(公告)号： US5897369A公开(公告)日： 1999-04-27
- 发明人: Young Kwon Jun
- 申请人： Young Kwon Jun
- 申请人地址： KRX Chungcheongbuk-do
- 专利权人： LG Semicon Co., Ltd.
- 当前专利权人： LG Semicon Co., Ltd.
- 当前专利权人地址： KRX Chungcheongbuk-do
- 优先权： KRX96-16462 19960516
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/768 ; H01L23/48 ; H01L23/522 ; H01L21/441
摘要：
A method for forming an interconnection of a semiconductor device, includes the steps of forming an insulating layer on a substrate on which a lower conductive layer is formed, selectively removing the insulating layer to form a first connecting hole and a second connecting hole for the pattern of an upper conductive layer, growing a first conductive material in the first connecting hole to form a buried plug and then depositing a second conductive material on the surface of the insulating layer to form a barrier layer, and depositing a third conductive material on the barrier layer to fill the second connecting hole and then patterning it to form an upper conductive layer.
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