发明授权
- 专利标题： Method for making semiconductor integrated circuit device having interconnection structure using tungsten film
- 专利标题（中）： 制造具有使用钨膜的互连结构的半导体集成电路器件的方法
-
申请号： US584065申请日： 1996-01-11
-
公开(公告)号： US5904556A公开(公告)日： 1999-05-18
- 发明人: Masayuki Suzuki , Shinji Nishihara , Masashi Sahara , Shinichi Ishida , Hiromi Abe , Sonoko Tohda , Hiroyuki Uchiyama , Hideaki Tsugane , Yoshiaki Yoshiura
- 申请人： Masayuki Suzuki , Shinji Nishihara , Masashi Sahara , Shinichi Ishida , Hiromi Abe , Sonoko Tohda , Hiroyuki Uchiyama , Hideaki Tsugane , Yoshiaki Yoshiura
- 申请人地址： JPX Tokyo JPX Tokyo JPX Tokyo
- 专利权人： Hitachi, Ltd.,Hitachi ULSI Engineering Corp.,Hitachi Microcomputer System, Ltd.
- 当前专利权人： Hitachi, Ltd.,Hitachi ULSI Engineering Corp.,Hitachi Microcomputer System, Ltd.
- 当前专利权人地址： JPX Tokyo JPX Tokyo JPX Tokyo
- 优先权： JPX7-002551 19950111
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/3205 ; H01L21/60 ; H01L21/768 ; H01L23/522 ; H01L21/4763 ; H01L21/44
摘要：
A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminium film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.
公开/授权文献
- US5121887A Comfort mechanism for seat belt retractor assembly 公开/授权日：1992-06-16
信息查询
IPC分类:
