发明授权
- 专利标题： Nonvolatile memory and method of programming the same
- 专利标题（中）： 非易失性存储器和编程方法相同
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申请号： US42022申请日： 1998-03-13
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公开(公告)号： US5905674A公开(公告)日： 1999-05-18
- 发明人: Woong-Lim Choi
- 申请人： Woong-Lim Choi
- 申请人地址： KRX Chungcheongbuk-Do
- 专利权人： LG Semicon Co., Ltd.
- 当前专利权人： LG Semicon Co., Ltd.
- 当前专利权人地址： KRX Chungcheongbuk-Do
- 优先权： KRX95-25761 19950821
- 主分类号： G11C17/00
- IPC分类号： G11C17/00 ; G11C11/56 ; G11C16/00 ; G11C16/02 ; G11C16/04 ; G11C16/34 ; H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; G11C11/34
摘要：
A nonvolatile memory cell includes a floating gate; a programming region, having a first current path to the floating gate, for programming by providing charge carriers to the floating gate through the first current path or extracting charge carriers stored in the floating gate; and a verification region, having a second current path separated from the first current path, for verifying the charge amount of the floating gate through the second current path during programming.
公开/授权文献
- USD370864S Tick-tock noise-making device for a clock pendulum 公开/授权日：1996-06-18
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