发明授权
US5910019A Method of producing silicon layer having surface controlled to be uneven
or even
失效
表面控制为不均匀或均匀的硅层的制造方法
- 专利标题： Method of producing silicon layer having surface controlled to be uneven or even
- 专利标题（中）： 表面控制为不均匀或均匀的硅层的制造方法
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申请号： US829358申请日： 1997-04-02
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公开(公告)号： US5910019A公开(公告)日： 1999-06-08
- 发明人: Hirohito Watanabe , Ichiro Honma
- 申请人： Hirohito Watanabe , Ichiro Honma
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 主分类号： H01L21/285
- IPC分类号： H01L21/285 ; H01L21/02 ; H01L21/205 ; H01L21/28 ; H01L21/822 ; H01L21/8242 ; H01L21/8244 ; H01L27/04 ; H01L27/10 ; H01L27/108 ; H01L27/11 ; H01L21/00
摘要：
A method of forming a silicon layer disclosed herein includes the steps of depositing an amorphous silicon layer on a substrate, irradiating a silane gas to the substrate, and performing an annealing process in a high vacuum or in an inert gas. The amorphous silicon layer is thereby converted into a silicon layer having an uneven surface caused by hemispherical or spherical silicon grains. The annealing process may be performed while irradiating a hydrogen gas or an oxidizing gas. In this case, such a silicon layer that has an even surface is formed.
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