发明授权
- 专利标题： Heterojunction semiconductor device
- 专利标题（中）： 异质结半导体器件
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申请号： US665510申请日： 1996-06-18
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公开(公告)号： US5912480A公开(公告)日： 1999-06-15
- 发明人: Yu Zhu , Yoshiteru Ishimaru , Naoki Takahashi , Masafumi Shimizu
- 申请人： Yu Zhu , Yoshiteru Ishimaru , Naoki Takahashi , Masafumi Shimizu
- 申请人地址： JPX Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JPX Osaka
- 优先权： JPX7-156567 19950622
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L21/338 ; H01L29/205 ; H01L29/47 ; H01L29/778 ; H01L29/812 ; H01L31/0328
摘要：
A heterojunction semiconductor device includes a first Schottky contact layer made of a first semiconductor, a second Schottky contact layer made of a second semiconductor and a metal electrode. The first Schottky contact layer, the second Schottky contact layer and the metal electrode are laminated in this order on a semiconductor substrate or on a main structure of a semiconductor device laminated on a semiconductor substrate from the substrate side or from the main structure side. The first Schottky contact layer serves as a barrier layer toward the second Schottky contact layer, and a layer thickness of the second Schottky contact layer is greater than the mean free pass of carriers in the second Schottky contact layer.
公开/授权文献
- US5147656A Apparatus for vulcanizing elastomer product 公开/授权日：1992-09-15
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