公开(公告)号：US5912480A

公开(公告)日：1999-06-15

申请号：US665510

申请日：1996-06-18

申请人： Yu Zhu ,  Yoshiteru Ishimaru ,  Naoki Takahashi ,  Masafumi Shimizu

发明人： Yu Zhu ,  Yoshiteru Ishimaru ,  Naoki Takahashi ,  Masafumi Shimizu

IPC分类号： H01L29/872 ,  H01L21/338 ,  H01L29/205 ,  H01L29/47 ,  H01L29/778 ,  H01L29/812 ,  H01L31/0328

CPC分类号： H01L29/205 ,  H01L29/475 ,  H01L29/7783

摘要： A heterojunction semiconductor device includes a first Schottky contact layer made of a first semiconductor, a second Schottky contact layer made of a second semiconductor and a metal electrode. The first Schottky contact layer, the second Schottky contact layer and the metal electrode are laminated in this order on a semiconductor substrate or on a main structure of a semiconductor device laminated on a semiconductor substrate from the substrate side or from the main structure side. The first Schottky contact layer serves as a barrier layer toward the second Schottky contact layer, and a layer thickness of the second Schottky contact layer is greater than the mean free pass of carriers in the second Schottky contact layer.

摘要翻译： 异质结半导体器件包括由第一半导体制成的第一肖特基接触层，由第二半导体制成的第二肖特基接触层和金属电极。 第一肖特基接触层，第二肖特基接触层和金属电极依次层叠在半导体基板上或层叠在半导体基板上的从基板侧或主结构侧的半导体器件的主结构上。 第一肖特基接触层用作朝向第二肖特基接触层的阻挡层，并且第二肖特基接触层的层厚度大于第二肖特基接触层中载流子的平均自由程。

公开(公告)号：US06239608B1

公开(公告)日：2001-05-29

申请号：US09330457

申请日：1999-06-11

申请人： Yu Zhu ,  Yoshiteru Ishimaru ,  Masafumi Shimizu

发明人： Yu Zhu ,  Yoshiteru Ishimaru ,  Masafumi Shimizu

IPC分类号： G01R3126

CPC分类号： H01L22/14 ,  G01R31/2632

摘要： A method for analyzing a Schottky junction of the present invention includes the step of obtaining electrical field dependence of the Schottky barrier height which shows a degree of dependence of the Schottky barrier height of the Schottky junction formed on a semiconductor wafer on an electrical field applied to an interface of the Schottky junction in a case where a reverse bias is applied to the Schottky junction. The method includes the steps of: applying the reverse bias of a plurality of voltage values to the Schottky junction; measuring a plurality of current values of a current flowing through the Schottky junction and a plurality of capacitance values of the Schottky junction, corresponding to the reverse bias of the plurality of voltage values; obtaining current-voltage characteristics and capacitance-voltage characteristics of the Schottky junction based on the plurality of current values and the plurality of capacitance values; calculating depletion layer charge-voltage characteristics showing a correlation between an accumulated charge in a depletion layer and a voltage by integrating the capacitance-voltage characteristics with respect to a voltage; and obtaining the electrical field dependence of the Schottky barrier height based on the current-voltage characteristics and the depletion layer charge-voltage characteristics.

摘要翻译： 用于分析本发明的肖特基结的方法包括获得肖特基势垒高度的电场依赖性的步骤，其显示形成在半导体晶片上的肖特基结的肖特基势垒高度与施加到 在将反向偏压施加到肖特基结的情况下的肖特基结的界面。 该方法包括以下步骤：将多个电压值的反向偏压施加到肖特基结; 测量流过所述肖特基结的电流的多个电流值和对应于所述多个电压值的反向偏置的所述肖特基结的多个电容值; 基于所述多个电流值和所述多个电容值，获得所述肖特基结的电流 - 电压特性和电容 - 电压特性; 计算通过将电容 - 电压特性相对于电压进行积分而示出耗尽层中的累积电荷与电压之间的相关性的耗尽层电荷 - 电压特性; 并且基于电流 - 电压特性和耗尽层电荷 - 电压特性获得肖特基势垒高度的电场依赖性。

公开(公告)号：US5942909A

公开(公告)日：1999-08-24

申请号：US893044

申请日：1997-07-15

申请人： Yu Zhu ,  Yoshiteru Ishimaru ,  Masafumi Shimizu

发明人： Yu Zhu ,  Yoshiteru Ishimaru ,  Masafumi Shimizu

IPC分类号： G01R31/26 ,  H01L21/66

CPC分类号： H01L22/14 ,  G01R31/2632

摘要： A method for analyzing a Schottky junction includes the step of obtaining electrical field dependence of the Schottky barrier height which shows a degree of dependence of the Schottky barrier height of the Schottky junction formed on a semiconductor wafer on an electrical field applied to an interface of the Schottky junction in a case where a reverse bias is applied to the Schottky junction. The method includes the steps of: applying the reverse bias of a plurality of voltage values to the Schottky junction; measuring a plurality of current values of a current flowing through the Schottky junction and a plurality of capacitance values of the Schottky junction, corresponding to the reverse bias of the plurality of voltage values; obtaining current-voltage characteristics and capacitance-voltage characteristics of the Schottky junction based on the plurality of current values and the plurality of capacitance values; calculating depletion layer charge-voltage characteristics showing a correlation between an accumulated charge in a depletion layer and a voltage by integrating the capacitance-voltage characteristics with respect to a voltage; and obtaining the electrical field dependence of the Schottky barrier height based on the current-voltage characteristics and the depletion layer charge-voltage characteristics.

摘要翻译： 用于分析肖特基结的方法包括获得肖特基势垒高度的电场依赖性的步骤，其显示了形成在半导体晶片上的肖特基结的肖特基势垒高度与施加到半导体晶片的界面的电场的依赖程度 在肖特基结上施加反向偏压的情况下的肖特基结。 该方法包括以下步骤：将多个电压值的反向偏压施加到肖特基结; 测量流过所述肖特基结的电流的多个电流值和对应于所述多个电压值的反向偏置的所述肖特基结的多个电容值; 基于所述多个电流值和所述多个电容值，获得所述肖特基结的电流 - 电压特性和电容 - 电压特性; 计算通过将电容 - 电压特性相对于电压进行积分而示出耗尽层中的累积电荷与电压之间的相关性的耗尽层电荷 - 电压特性; 并且基于电流 - 电压特性和耗尽层电荷 - 电压特性获得肖特基势垒高度的电场依赖性。

公开(公告)号：US07658253B2

公开(公告)日：2010-02-09

申请号：US11737584

申请日：2007-04-19

申请人： Masafumi Shimizu

发明人： Masafumi Shimizu

IPC分类号： B62K11/00 ,  B62J17/00

CPC分类号： B62J17/02 ,  B62K2202/00

摘要： A straddle-type vehicle with improved meter viewability and easier handle assembly. A handle cover covers a handle, and a meter unit is attached to the handle cover. The meter unit includes a side surface that extends upward from an upper surface of the handle cover, and a lens that covers a meter formed in an upper section of the side surface. An upper end of the meter unit is positioned above an upper end of the handle cover.

摘要翻译： 具有改进的仪表可视性和更容易的手柄组装的跨骑式车辆。 手柄盖覆盖手柄，仪表单元连接到手柄盖上。 仪表单元包括从手柄盖的上表面向上延伸的侧表面和覆盖形成在侧表面的上部中的表的透镜。 仪表单元的上端位于手柄盖的上端的上方。

公开(公告)号：US20080023111A1

公开(公告)日：2008-01-31

申请号：US11722410

申请日：2005-12-21

申请人： Ryota Nakanishi ,  Hiroshi Irie ,  Masaya Nakamura ,  Kohei Okamoto ,  Masafumi Shimizu

发明人： Ryota Nakanishi ,  Hiroshi Irie ,  Masaya Nakamura ,  Kohei Okamoto ,  Masafumi Shimizu

IPC分类号： C23C8/10 ,  B05C21/00 ,  B05C3/02

CPC分类号： C23C2/02 ,  Y10T428/12799

摘要： According to a process for hot-dip galvanization of the present invention, a steel sheet is treated by the oxidization/reduction method for better quality of galvanization and then hot-dip galvanized. An annealing line of equipment for hot-dip galvanization is composed of a non-oxidizing zone, an oxidizing zone, and a reducing zone, in his order. A steel sheet containing elements liable to oxidize more easily than iron is oxidized by blowing flames onto it in the oxidizing zone according to the oxidization/reduction method. Further, the steel sheet is reduced and annealed in the reducing zone.

摘要翻译： 根据本发明的热镀锌方法，通过氧化还原法对钢板进行镀锌处理，然后进行热镀锌。 用于热浸镀锌的设备退火线按顺序由非氧化区，氧化区和还原区组成。 根据氧化还原法，含有容易比铁氧化的元素的钢板在氧化区域内通过在其上吹入火焰而被氧化。 此外，钢板在还原区中还原并退火。

公开(公告)号：US20070228764A1

公开(公告)日：2007-10-04

申请号：US11686782

申请日：2007-03-15

申请人： Masafumi Shimizu ,  Tadashi Shimomura

发明人： Masafumi Shimizu ,  Tadashi Shimomura

IPC分类号： B62J17/00

CPC分类号： B62J17/02 ,  B60Y2200/12 ,  B62K2202/00

摘要： A motorcycle having a meter device and a handlebar cover arranged to inhibit damage or the adherence of powder coating to the meter device from the handlebar cover. In one embodiment, a rear cover comprises a peripheral wall, which surrounds an outer periphery of a meter device. At least a front portion of the peripheral wall, which surrounds a front side of the meter device, comprises a first portion and a second portion. The first portion is positioned inside the front cover. An outer surface of the second portion is exposed between a rear edge of the front cover and the meter. A dimension of the first portion and the second portion are the same in a longitudinal direction of the motorcycle, or the second portion is smaller than the first portion.

摘要翻译： 一种具有仪表装置和把手盖的摩托车，其布置成防止来自车把盖的粉末涂层损坏或附着到仪表装置。 在一个实施例中，后盖包括围绕仪表装置的外周的周壁。 围绕仪表装置的前侧的周壁的至少前部包括第一部分和第二部分。 第一部分位于前盖内。 第二部分的外表面暴露在前盖的后边缘和仪表之间。 第一部分和第二部分的尺寸在摩托车的纵向方向上相同，或者第二部分小于第一部分。

公开(公告)号：US20100019131A1

公开(公告)日：2010-01-28

申请号：US12487281

申请日：2009-06-18

申请人： Masafumi Shimizu

发明人： Masafumi Shimizu

IPC分类号： H03F3/08

CPC分类号： H03F3/08

摘要： A photodetector amplifier circuit that converts a photodetector signal photoelectrically into a photocurrent and controls on or off state of an output transistor according to the photocurrent. The photodetector amplifier circuit has a first control circuit that is connected to a control terminal of the output transistor and controls on or off state of the output transistor according to the photocurrent and a switch that is connected between the control terminal of the output transistor and a ground voltage terminal and if the output transistor is turned off, discharges the control terminal of the output transistor by making the control terminal of the output transistor conductive with the ground voltage terminal.

摘要翻译： 光电检测器放大器电路，其将光电检测器信号光电转换成光电流，并根据光电流控制输出晶体管的导通或截止状态。 光电检测放大器电路具有连接到输出晶体管的控制端的第一控制电路，并根据光电流控制输出晶体管的导通或截止状态，以及连接在输出晶体管的控制端和 接地电压端子，并且如果输出晶体管截止，则通过使输出晶体管的控制端子与接地电压端子导通来放电输出晶体管的控制端子。

公开(公告)号：US20100003541A1

公开(公告)日：2010-01-07

申请号：US12094997

申请日：2006-12-01

申请人： Yuichi Futamura ,  Michitaka Tsunezawa ,  Masaaki Miura ,  Hiroshi Irie ,  Takatoshi Yoshida ,  Masafumi Shimizu

发明人： Yuichi Futamura ,  Michitaka Tsunezawa ,  Masaaki Miura ,  Hiroshi Irie ,  Takatoshi Yoshida ,  Masafumi Shimizu

IPC分类号： B32B15/18

CPC分类号： C23C2/28 ,  C21D8/02 ,  C21D9/46 ,  C23C2/06 ,  Y10T428/12799 ,  Y10T428/12958 ,  Y10T428/12965 ,  Y10T428/265

摘要： Disclosed is a high-strength hot dip galvannealed steel sheet having high powdering resistance produced by employing such a constitution that a Fe—Zn alloy plated layer is provided on at least one side of a basis steel sheet and a region in which Al (atomic %)/Zn (atomic %)≧0.10 is present in a thickness of 300 Å or more from the surface of the plated layer along the depth direction of the plated layer. Also disclosed is a hot dip galvannealed steel sheet whose formability is greatly improved by optionally specifying chemical composition and structure of the basis steel sheet.

摘要翻译： 本发明公开了一种通过采用这样一种构成，即在基材钢板的至少一面上设置Fe-Zn合金镀层和Al（原子％）的区域制成的耐高耐热性合金化热浸镀锌钢板， ）/ Zn（原子％）> = 0.10从镀层的表面沿着镀层的深度方向以厚度为单位存在。 还公开了通过任选地指定基础钢板的化学组成和结构，可以大大提高其成形性的热浸镀锌合金化热镀锌钢板。

公开(公告)号：US06504091B2

公开(公告)日：2003-01-07

申请号：US09779827

申请日：2001-02-09

申请人： Tadashi Hisamatsu ,  Kazuyo Nakamura ,  Yuji Komatsu ,  Masafumi Shimizu

发明人： Tadashi Hisamatsu ,  Kazuyo Nakamura ,  Yuji Komatsu ,  Masafumi Shimizu

IPC分类号： H01L3104

CPC分类号： H01L31/1852 ,  H01L31/03046 ,  H01L31/0687 ,  H01L31/1844 ,  Y02E10/544

摘要： A photoelectric converting device is provided with enhanced photoelectric conversion efficiency by optimizing a combination of materials used for top and bottom cells. The photoelectric converting device of the present invention is provided with first and second pn junctions. The first pn junction is formed in a semiconductor substantially represented by (Al1-yGay)1-xInxP, and the second pn junction is formed in a semiconductor substantially represented by Ga1-zInzAs.

摘要翻译： 通过优化用于顶部和底部电池的材料的组合，光电转换装置具有增强的光电转换效率。 本发明的光电转换装置具有第一和第二pn结。 第一pn结形成在基本上由（Al1-yGay）1-xInxP表示的半导体中，并且第二pn结形成在基本上由Ga1-zInzAs表示的半导体中。

公开(公告)号：US20090038432A1

公开(公告)日：2009-02-12

申请号：US12188946

申请日：2008-08-08

申请人： Masafumi Shimizu

发明人： Masafumi Shimizu

IPC分类号： B62K11/14 ,  B62K21/12

CPC分类号： B62J17/02 ,  B62K11/14 ,  B62K21/12 ,  B62K2202/00 ,  Y10T74/20822

摘要： A vehicle includes a handlebar and a handlebar cover. The handlebar cover includes a front cover for covering a front side of the handlebar and a rear cover for covering a rear side of the handlebar. The front and rear covers are fastened to each other by a fastener member. The fastener member is covered by a cover attached to the handlebar cover.

摘要翻译： 车辆包括车把和车把罩。 手柄盖包括用于覆盖车把前侧的前盖和用于覆盖把手后侧的后盖。 前盖和后盖通过紧固件固定在一起。 紧固件由附接到手把盖的盖子覆盖。