发明授权
- 专利标题： Film forming method and semiconductor device manufacturing method
- 专利标题（中）： 成膜方法和半导体器件的制造方法
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申请号： US842425申请日： 1997-04-24
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公开(公告)号： US5915200A公开(公告)日： 1999-06-22
- 发明人: Noboru Tokumasu , Kazuo Maeda
- 申请人： Noboru Tokumasu , Kazuo Maeda
- 申请人地址： JPX JPX
- 专利权人： Canon Sales Co., Inc.,Semiconductor Process Laboratory Co., Ltd.
- 当前专利权人： Canon Sales Co., Inc.,Semiconductor Process Laboratory Co., Ltd.
- 当前专利权人地址： JPX JPX
- 优先权： JPX8-288787 19961030
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; C23C16/40 ; H01L21/316 ; H01L23/522 ; H01L21/443
摘要：
A film forming method is provided for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including a phosphorus containing compound which has III valence phosphorus and at least one bond of phosphorus to oxygen, a silicon containing insulating film including P.sub.2 O.sub.3 is formed on a deposition substrate, thereby greatly reducing fluidization temperature for planarization.
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