摘要:
A gas discharging device is provided which has a function as one of opposing electrodes to plasmanize a reaction gas and executes film formation and etching with a plasma gas. The device comprises a base body having a recess portion at its central portion and a through-hole for introducing a gas into the recess portion, a gas distributing plate provided in the recess portion for introducing the gas in a radial direction, and an annular gas discharging member for discharging the gas introduced by the gas distributing plate.
摘要:
In a method for forming a film by thermal CVD, a fluorine-containing silicon oxide film is formed on a substrate by thermal reaction of a mixed gas while heating the substrate. The mixed gas includes an organic silane having a Si-F bond, an organic silane having no Si-F bond, and ozone.
摘要:
In a process for forming a CVD film, a polysiloxane compound having at least two silicon-oxygen bonds is reacted with ozone to form an SiO.sub.2 film. If desired, the reaction may be effected in the presence of a gas containing an impurity mixed with the polysiloxane compound and ozone to form a PSG, BSG or BPSG film. In a semiconductor device, the SiO.sub.2 film, or the PSG, BSG or BPSG film is used as a planarizing film, an interlayer insulating film, or a cover insulating film.
摘要:
A gas-phase growth process for growing films of uniform thickness or having a prescribed pattern form or growing films sequentially onto a substrate and an apparatus related thereto. The films are grown by allowing an inert gas to flow over a reaction gas flow in parallel to the surface of the substrate. Optionally, the substrate surface could be irradiated by a UV light source which is directed from above the inert gas toward the substrate surface.
摘要:
A gas-phase growth process for forming a film of SiO.sub.2 Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z, which comprises reacting a mixture of an organic or inorganic silane with one or more reaction gases comprising O.sub.2, N.sub.2 O, NO.sub.2 NO, CO.sub.2 CO and NH.sub.3, with the proviso that the mixture of inorganic silane and O.sub.2 is excluded as a reaction gas combination of the present invention. The process comprises feeding a reaction gas into a reaction chamber which is kept at a reaction temperature below 500.degree. C., and subjecting the surface of a substrate chamber which is placed in the reaction chamber to UV irradiation. This irradiation excites the reaction gas, which allows a low-temperature gas-phase growth to proceed. The photo-excitation occurs selectively only at UV-irradiated sections, so that a film growth may occur selectively on the substrate surface within the range of UV irradiation. The optional use of a suitable mask allows a film of a prescribed pattern to be formed on the substrate surface.
摘要翻译:一种用于形成SiO 2 + L,Si 3 N 4或SixO y N z的膜的气相生长方法,其包括将有机或无机硅烷的混合物与一种或多种包含O 2,N 2 O,NO 2 + L,NO,CO 2 + L的反应气体 ,CO和NH 3,条件是排除无机硅烷和O 2的混合物作为本发明的反应气体组合。 该方法包括将反应气体进料到保持在低于500℃的反应温度的反应室中,并将放置在反应室中的基板室的表面进行紫外线照射。 该照射激发反应气体,这允许进行低温气相生长。 光激发仅在UV照射部分选择性地发生,从而在UV照射的范围内,可以在衬底表面上选择性地发生膜生长。 可选地使用合适的掩模允许在基板表面上形成规定图案的膜。
摘要:
The present invention relates to a film forming method of forming a silicon containing insulating film by plasma CVD. Objects of the present invention are to form, using a highly safe reaction gas, an insulating film which is dense, has excellent step coverage and is low in moisture and in organic residues such as carbon. The insulating film has good affinity for the silicon oxide film formed by the thermal CVD method. The invention also enables control of the refractive index and stress etc. of the insulating film formed. The mixed gas, including the organic compound having Si-H bonds and the oxidizing gas, is converted to a plasma and the silicon containing insulating film is formed on a deposition substrate from the plasma.
摘要:
The present invention provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while the substrate is heated, an organic silane and ozone are reacted to form a silicon oxide film on the substrate under normal pressure or reduced pressure. The present invention also provides a method of manufacturing a semiconductor device, characterized in that, after a surface of a substrate is reformed by high frequency plasma irradiation while heating the substrate, organic silane, gas containing dopants such as phosphorus or boron and ozone are mixed, and a PSG film, a BSG film, a BPSG film or the like is formed on the substrate under normal pressure or reduced pressure.
摘要:
An apparatus and method for manufacturing a semiconductor device capable of forming a single layer film or a multilayer film of improved quality by continuously processing without exposure of the wafer to the ambient air. The apparatus includes a film forming section having a gas dispersion unit for supplying reaction gas, a processing section for processing the formed film and a wafer holder for holding a wafer facing the gas dispersion unit or the processing section. The wafer holder moves the wafer between the film forming section and the processing section while heating the wafer by a heating element contained therein.
摘要:
In a process for producing a semiconductor device, deposition of a CVD-SiO.sub.2 film at a given first O.sub.3 concentration according to a TEOS-SiO.sub.3 reaction is followed by further deposition of a CVD-SiO.sub.2 film at a second O.sub.3 concentration higher than the first O.sub.3 concentration according to the TEOS-O.sub.3 reaction to form a CVD-SiO.sub.2 film having a predetermined thickness and a surface little uneven.
摘要:
The invention is a method for forming a flattened interlayer insulating film covering a wiring layer or the like of a semiconductor IC device, and a method of manufacturing a semiconductor device. The film-forming method includes the steps of preparing a deposition gas containing an inert gas, and a silicon and phosphorus-containing compound having III valance phosphorus in which at least one oxygen is bonded to the phosphorous, and forming a silicon containing insulating film containing P2O3 on a substrate by using the deposition gas.