- 专利标题： Apparatus for fabricating semiconductor device and method for fabricating semiconductor device
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申请号： US971569申请日： 1997-11-17
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公开(公告)号： US5919336A公开(公告)日： 1999-07-06
- 发明人: Jun Kikuchi , Shuzo Fujimura , Masao Iga
- 申请人： Jun Kikuchi , Shuzo Fujimura , Masao Iga
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX5-074076 19930331; JPX5-152381 19930623
- 主分类号： C23F4/00
- IPC分类号： C23F4/00 ; C23G5/00 ; H01J37/32 ; H01L21/02 ; H01L21/302 ; H01L21/304 ; H01L21/306 ; H01L21/3065 ; B65C3/26
摘要：
A method for treating the surface of a semiconductor layer includes the step of removing an oxide from the surface of a semiconductor layer by adding fluorine or fluoride to hydrogen radicals separately from plasma atmosphere and thereafter exposing the semiconductor layer to the mixed gas and hydrogen-terminating the surface.
公开/授权文献
- USPP8652P Gypsophila plant named White Festival 公开/授权日：1994-03-22
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