公开(公告)号：US6024045A

公开(公告)日：2000-02-15

申请号：US178489

申请日：1998-10-26

申请人： Jun Kikuchi ,  Shuzo Fujimura ,  Masao Iga

发明人： Jun Kikuchi ,  Shuzo Fujimura ,  Masao Iga

IPC分类号： C23F4/00 ,  C23G5/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01L21/02054 ,  H01J37/32357 ,  H01L21/02046

摘要： A method for treating the surface of a semiconductor layer includes the step of removing an oxide from the surface of a semiconductor layer by adding fluorine or fluoride to hydrogen radicals separately from plasma atmosphere and thereafter exposing the semiconductor layer to the mixed gas and hydrogen-terminating the surface.

摘要翻译： 用于处理半导体层的表面的方法包括通过与等离子体气氛分开地向氢自由基中加入氟或氟化物，然后将半导体层暴露于混合气体和氢终止，从半导体层的表面除去氧化物的步骤 表面。

公开(公告)号：US5919336A

公开(公告)日：1999-07-06

申请号：US971569

申请日：1997-11-17

申请人： Jun Kikuchi ,  Shuzo Fujimura ,  Masao Iga

发明人： Jun Kikuchi ,  Shuzo Fujimura ,  Masao Iga

IPC分类号： C23F4/00 ,  C23G5/00 ,  H01J37/32 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  B65C3/26

CPC分类号： H01L21/02054 ,  H01J37/32357 ,  H01L21/02046

摘要： A method for treating the surface of a semiconductor layer includes the step of removing an oxide from the surface of a semiconductor layer by adding fluorine or fluoride to hydrogen radicals separately from plasma atmosphere and thereafter exposing the semiconductor layer to the mixed gas and hydrogen-terminating the surface.

公开(公告)号：US5885361A

公开(公告)日：1999-03-23

申请号：US434715

申请日：1995-05-04

申请人： Jun Kikuchi ,  Shuzo Fujimura

发明人： Jun Kikuchi ,  Shuzo Fujimura

IPC分类号： H01L21/302 ,  B08B7/00 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/31

CPC分类号： B08B7/0035

摘要： A method of cleaning a hydrogen plasma down-stream apparatus for processing a material in a process chamber by guiding a down-stream of hydrogen plasma generated in a plasma generating space onto the material via a gas flow path with an inner main portion thereof being made of quartz, wherein plasma of a gas containing hydrogen, preferably containing hydrogen and water vapor, is generated in the plasma generating space, nitrogen fluoride is added at a down-stream position from the plasma, and a down-stream of the plasma is directed to the process chamber to clean the gas flow path. Amount of hydrogen radicals can be monitored by a metal sheath thermocouple. A hydrogen plasma down-stream apparatus suitable for removing a native oxide film or a resist film on the surface of silicon can be efficiently cleaned without disassembling it.

摘要翻译： 一种清洗氢等离子体下游装置的方法，用于通过在等离子体产生空间中产生的氢等离子体的下游通过其内部主要部分的气体流路引导到材料上来处理处理室中的材料 的石英，其中在等离子体产生空间中产生含有氢气，优选含有氢和水蒸汽的气体的等离子体，在等离子体的下游位置加入氟化氮，等离子体的下游被引导 到处理室以清洁气体流动路径。 可以通过金属鞘热电偶监测氢自由基的量。 可以有效地清洁适合于去除硅表面上的自然氧化膜或抗蚀剂膜的氢等离子体下游装置，而无需拆卸它。

公开(公告)号：US5773316A

公开(公告)日：1998-06-30

申请号：US401689

申请日：1995-03-10

申请人： Ryo Kurosaki ,  Jun Kikuchi ,  Haruhiko Serizawa ,  Shuzo Fujimura

发明人： Ryo Kurosaki ,  Jun Kikuchi ,  Haruhiko Serizawa ,  Shuzo Fujimura

IPC分类号： G01K11/00 ,  H01L21/66 ,  G01R31/26

CPC分类号： G01K11/00 ,  B24B37/013 ,  H01L22/26 ,  H01L22/12

摘要： Pulsed laser beams are applied to an object to be measured. A first laser beam of a pulsed laser beam having a first wavelength which is oscillated immediately after the rise of the pulsed laser beam, and a second laser beam having a second wavelength which is oscillated thereafter are used. Based on a difference between an intensity of first interfered light of reflected light of the first laser beam or transmitted light thereof, and an intensity of reflected light of the second laser beam or transmitted light thereof, temperatures of the object to be measured, and whether the temperatures are on increase or on decrease are judged. The method and device can be realized by simple structures and can measure a direction of changes of the physical quantities.

摘要翻译： 将脉冲激光束施加到被测量物体上。 使用脉冲激光束的第一激光束，其具有在脉冲激光束的上升之后立即振荡的第一波长，以及其后具有振荡的第二波长的第二激光束。 基于第一激光束的反射光的第一干涉光的强度或其透射光与第二激光的反射光的强度或其透射光之间的差异，被测量物体的温度以及是否 温度上升或下降。 该方法和装置可以通过简单的结构实现，并可以测量物理量变化的方向。

公开(公告)号：US06168310A

公开(公告)日：2001-01-02

申请号：US09039994

申请日：1998-03-17

申请人： Ryo Kurosaki ,  Jun Kikuchi ,  Haruhiko Serizawa ,  Shuzo Fujimura

发明人： Ryo Kurosaki ,  Jun Kikuchi ,  Haruhiko Serizawa ,  Shuzo Fujimura

IPC分类号： G01K1100

CPC分类号： G01K11/00 ,  B24B37/013 ,  H01L22/12 ,  H01L22/26

摘要： Pulsed laser beams are applied to an object to be measured. A first laser beam of a pulsed laser beam having a first wavelength which is oscillated immediately after the rise of the pulsed laser beam, and a second laser beam having a second wavelength which is oscillated thereafter are used. Based on a difference between an intensity of first interfered light of reflected light of the first laser beam or transmitted light thereof, and an intensity of reflected light of the second laser beam or transmitted light thereof, temperatures of the object to be measured, and whether the temperatures are on increase or on decrease are judged. The method and device can be realized by simple structures and can measure a direction of changes of the physical quantities.

摘要翻译： 将脉冲激光束施加到被测量物体上。 使用脉冲激光束的第一激光束，其具有在脉冲激光束的上升之后立即振荡的第一波长，以及其后具有振荡的第二波长的第二激光束。 基于第一激光束的反射光的第一干涉光的强度或其透射光与第二激光束的反射光强度或其透射光之间的差异，被测量物体的温度以及是否 温度上升或下降。 该方法和装置可以通过简单的结构实现，并可以测量物理量变化的方向。

公开(公告)号：US6007671A

公开(公告)日：1999-12-28

申请号：US699933

申请日：1996-08-20

申请人： Shuzo Fujimura ,  Jun Kikuchi

发明人： Shuzo Fujimura ,  Jun Kikuchi

IPC分类号： C23F4/00 ,  G03F7/42 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/24 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/32357 ,  H05H1/24 ,  H05H1/46

摘要： The present invention relates to a hydrogen plasma down-flow processing method and a hydrogen plasma down-flow processing apparatus and has an object to provide a hydrogen plasma down-flow processing method and a hydrogen plasma down-flow processing apparatus ensuring that it is possible to make it difficult for hydrogen atoms to deposit and recombine on the internal wall of the apparatus. High speed hydrogen plasma processing can be realized by improving transfer efficiency of hydrogen atoms to the processing chamber. Moreover hydrogen plasma efficiency can also be improved by reducing influence of oxidation species such as OH radical and oxygen atom concentrations can be controlled as desired by keeping the change in hydrogen atom concentration small. The apparatus includes a vacuum chamber of which at least a part of the structural members exposed to a vacuum is made by silicon oxide. In a hydrogen plasma down-flow processing method, whereby the processed object is processed in the down-flow area, the plasma is generated from the gas including at least hydrogen. A processing object is processed by heating at least a part of the silicon oxide region to 443.degree. C. or higher.

摘要翻译： 本发明涉及氢等离子体下流处理方法和氢等离子体下流处理装置，其目的在于提供氢等离子体下流处理方法和氢等离子体下流处理装置，确保可以 使得氢原子难以沉积并重组在设备的内壁上。 可以通过提高氢原子对处理室的转移效率来实现高速氢等离子体处理。 此外，通过降低OH基等氧化物质的影响也能够提高氢等离子体效率，通过保持氢原子浓度的变化，可以根据需要控制氧原子浓度。 该装置包括真空室，其中暴露于真空的结构构件的至少一部分由氧化硅制成。 在氢等离子体下流处理方法中，由于处理对象在下流区域被处理，因此至少包含氢气的气体产生等离子体。 通过将至少一部分氧化硅区域加热至443℃以上进行处理。

公开(公告)号：US06063300A

公开(公告)日：2000-05-16

申请号：US26695

申请日：1998-02-20

申请人： Miki Suzuki ,  Jun Kikuchi ,  Mitsuaki Nagasaka ,  Shuzo Fujimura

发明人： Miki Suzuki ,  Jun Kikuchi ,  Mitsuaki Nagasaka ,  Shuzo Fujimura

IPC分类号： H01L21/302 ,  B44C1/22 ,  C03C15/00 ,  G01K5/48 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/768

CPC分类号： H01L21/31116 ,  H01J37/32192 ,  H01L21/02063 ,  H01L21/28525 ,  H01L21/76804 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76828 ,  H01L21/76877

摘要： A method of manufacturing a semiconductor device, including the steps of: cooling a semiconductor wafer to a predetermined temperature, the semiconductor wafer being mounted on a stage provided with cooling means and having a thin oxide film on a surface thereof; supplying energy to gas containing hydrogen and water vapor to excite the gas into a plasma state; adding nitrogen fluoride downstream into a flow of the gas in the plasma state; and introducing a flow of the gas, including the nitrogen fluoride, to the semiconductor wafer to etch the thin oxide film while maintaining the semiconductor wafer at the predetermined temperature.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：将半导体晶片冷却至预定温度，将半导体晶片安装在设置有冷却装置的台上，并在其表面上具有薄氧化膜; 向含有氢和水蒸汽的气体供应能量以将气体激发成等离子体状态; 在等离子体状态的气体流中向下游加入氮氟化物; 并将包括氮氟化物在内的气体流引入半导体晶片，以在半导体晶片保持在预定温度的同时蚀刻薄氧化膜。

公开(公告)号：US06107215A

公开(公告)日：2000-08-22

申请号：US41800

申请日：1998-03-13

申请人： Shuzo Fujimura ,  Hiroki Ogawa ,  Jun Kikuchi

发明人： Shuzo Fujimura ,  Hiroki Ogawa ,  Jun Kikuchi

IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/26 ,  H01L21/42 ,  H01L21/477

CPC分类号： H01L21/02046

摘要： A hydrogen plasma downstream treatment equipment comprises a first gas supply source for supplying a hydrogen gas, a second gas supply source for supplying a nitrogen fluoride gas, and a tube-like chamber used for surface treatment of a semiconductor layer by use of the hydrogen gas and the nitrogen fluoride gas. The chamber includes a plasma generator for activating the hydrogen gas and the nitrogen fluoride gas by introducing the nitrogen fluoride gas in which a flow rate ratio of the hydrogen gas and the nitrogen fluoride gas is in excess of 4, a processor placed in a downstream of the plasma generator to place the semiconductor layer therein, and gas flow controlling means for controlling the first gas supply source and the second gas supply source so as to set a flow rate of the nitrogen fluoride gas four times a flow rate of the hydrogen gas.

摘要翻译： 氢等离子体下游处理设备包括用于供应氢气的第一气体供应源，用于供应氮氟化物气体的第二气体供应源和用于通过使用氢气的半导体层的表面处理的管状室 和氟化氮气体。 该室包括通过引入其中氢气和氮氟化物气体的流量比超过4的氮氟化物气体来激活氢气和氮氟化物气体的等离子体发生器，处理器位于 等离子体发生器，其中放置半导体层;以及气体流量控制装置，用于控制第一气体供应源和第二气体供应源，以将氮氟化物气体的流量设定为氢气流量的四倍。

公开(公告)号：US5364519A

公开(公告)日：1994-11-15

申请号：US54609

申请日：1993-04-30

申请人： Shuzo Fujimura ,  Toshimasa Kisa ,  Yasunari Motoki

发明人： Shuzo Fujimura ,  Toshimasa Kisa ,  Yasunari Motoki

IPC分类号： H01J37/32 ,  C23C16/50 ,  H01L21/00

CPC分类号： H01J37/32229 ,  H01J37/32192 ,  H01J37/32238

摘要： A microwave plasma processing process and apparatus useful in the fabrication of integrated circuit (IC) or similar semiconductor devices, wherein the object or material to be processed, such as a semiconductor wafer, is processed with plasma generated using microwaves transmitted through a microwave transmission window disposed perpendicular to an electric field of the progressive microwaves in the waveguide.

摘要翻译： 一种用于制造集成电路（IC）或类似半导体器件的微波等离子体处理工艺和装置，其中待处理对象或诸如半导体晶片的材料使用通过微波透射窗口传输的微波产生的等离子体进行处理 垂直于波导中的逐行微波的电场设置。

公开(公告)号：US4980022A

公开(公告)日：1990-12-25

申请号：US488556

申请日：1990-03-05

申请人： Shuzo Fujimura ,  Kenichi Hikazutani

发明人： Shuzo Fujimura ,  Kenichi Hikazutani

IPC分类号： H01L21/302 ,  G03F7/42 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311

CPC分类号： H01L21/31138 ,  G03F7/427

摘要： A method removes a first layer of an organic matter which is formed on a second layer, where the first layer is subjected to an ion implantation. The method includes the steps of generating a plasma by exciting a gas which includes H.sub.2 O using a high-frequency energy source, and removing the first layer within the plasma.