发明授权
US5932004A Semiconductor laser device having clad and contact layers respectively
doped with MG and method for fabricating the same
失效
具有分别掺有MG的包层和接触层的半导体激光器件及其制造方法
- 专利标题: Semiconductor laser device having clad and contact layers respectively doped with MG and method for fabricating the same
- 专利标题(中): 具有分别掺有MG的包层和接触层的半导体激光器件及其制造方法
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申请号: US861762申请日: 1997-05-22
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公开(公告)号: US5932004A公开(公告)日: 1999-08-03
- 发明人: Taiji Morimoto , Zenkichi Shibata , Takashi Ishizumi , Keisuke Miyazaki , Toshio Hata , Yoshinori Ohitsu
- 申请人: Taiji Morimoto , Zenkichi Shibata , Takashi Ishizumi , Keisuke Miyazaki , Toshio Hata , Yoshinori Ohitsu
- 申请人地址: JPX Osaka
- 专利权人: Sharp Kabushiki Kaisha
- 当前专利权人: Sharp Kabushiki Kaisha
- 当前专利权人地址: JPX Osaka
- 优先权: JPX6-165059 19940718
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01L33/30 ; H01S5/042 ; H01S5/223 ; H01S5/30 ; H01S5/32 ; H01S5/323 ; C30B19/06
摘要:
A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked on a substrate. Then a clad layer composed of p-type AlGaAs doped with a p-type impurity Mg, and a contact layer composed of p-type GaAs doped also with Mg are grown by an LPE growth process, and further a surface layer having a high-resistance portion present in the contact layer and low in carrier concentration is removed. The active layer for use of laser beam oscillation is arranged in a substantially center of an end surface from which the laser beam is emitted.