发明授权
US5936283A MOSFET for input/output protective circuit having a multi-layered
contact structure with multiple contact holes on a single diffusion
layer
失效
用于输入/输出保护电路的MOSFET具有在单个扩散层上具有多个接触孔的多层接触结构
- 专利标题： MOSFET for input/output protective circuit having a multi-layered contact structure with multiple contact holes on a single diffusion layer
- 专利标题（中）： 用于输入/输出保护电路的MOSFET具有在单个扩散层上具有多个接触孔的多层接触结构
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申请号： US906336申请日： 1997-08-05
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公开(公告)号： US5936283A公开(公告)日： 1999-08-10
- 发明人: Kaoru Narita , Takeo Fujii
- 申请人： Kaoru Narita , Takeo Fujii
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-205612 19960805
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/3205 ; H01L21/768 ; H01L21/822 ; H01L21/8234 ; H01L23/62 ; H01L27/02 ; H01L27/04 ; H01L27/088 ; H01L29/417 ; H01L29/45 ; H01L29/78 ; H01L23/48
摘要：
According to the present invention, a MOSFET for an input/output protective circuit in which a source diffusion layer, a drain diffusion layer and a gate electrode are formed on a semiconductor substrate comprises a high melting point metal silicide layer disposed on the drain diffusion layer through a first insulating film, a metal wire layer disposed on the high melting point metal silicide layer through a second insulating film, at least two first contact holes for electrically connecting the high melting point metal silicide layer and the metal wire layer, and a second contact hole for electrically connecting the high melting point metal silicide layer and the drain diffusion layer, wherein the second contact hole is disposed at a substantial center between the two first contact holes.
公开/授权文献
- US5241819A Tappet valve assembly for automatic railway vehicle couplers 公开/授权日：1993-09-07
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