发明授权
- 专利标题： Ferroelectric thin film, electric device, and method for preparing ferroelectric thin film
- 专利标题（中）： 铁电薄膜，电子器件和制备铁电薄膜的方法
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申请号： US524809申请日： 1995-09-07
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公开(公告)号： US5955213A公开(公告)日： 1999-09-21
- 发明人: Yoshihiko Yano , Takao Noguchi
- 申请人： Yoshihiko Yano , Takao Noguchi
- 申请人地址： JPX Tokyo
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-240607 19950825
- 主分类号： C30B29/22
- IPC分类号： C30B29/22 ; C23C14/00 ; C23C14/02 ; C23C14/08 ; C30B23/02 ; H01G4/33 ; H01L21/283 ; H01L21/8242 ; H01L21/8246 ; H01L21/8247 ; H01L27/10 ; H01L27/105 ; H01L27/108 ; H01L29/788 ; H01L29/792 ; B32B17/00
摘要：
On a single crystal substrate such as silicon, a ferroelectric thin film having a YMnO.sub.3 hexagonal crystal structure, composed mainly of a rare earth element (inclusive of scandium and yttrium), manganese and oxygen, and c-plane oriented parallel to the substrate surface is formed, preferably with an epitaxial oxide film or conductive epitaxial film being interposed therebetween. It is suitable for gate type non-volatile memory devices having MFIS and MFMIS structures.
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