发明授权
US5963836A Methods for minimizing as-deposited stress in tungsten silicide films
失效
在硅化钨膜中最小化沉积应力的方法
- 专利标题： Methods for minimizing as-deposited stress in tungsten silicide films
- 专利标题（中）： 在硅化钨膜中最小化沉积应力的方法
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申请号： US759868申请日： 1996-12-03
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公开(公告)号： US5963836A公开(公告)日： 1999-10-05
- 发明人: Sien G. Kang , John Y. Adachi , David Badt , Edward L. Sill , Hector Velasco
- 申请人： Sien G. Kang , John Y. Adachi , David Badt , Edward L. Sill , Hector Velasco
- 申请人地址： CA Sunnyvale
- 专利权人： Genus, Inc.
- 当前专利权人： Genus, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： C23C16/42
- IPC分类号： C23C16/42 ; C23C16/455 ; H01L21/28 ; H01L21/285 ; H01L21/44
摘要：
Processing of substrates in a CVD reactor system wherein tungsten silicide is deposited is accomplished with preflow and postflow of reducing gases before and after deposition steps to ensure that tungsten-rich film is not deposited at the interface of the tungsten silicide film to the substrates or on the tungsten silicide film at the end of deposition processing. For systems having a remote gas injection and flow control system connected by a gas supply manifold to a CVD reactor chamber, an isolation valve is provided in the gas supply manifold, and the valve is held closed during at least a portion of time between deposition sequences.
公开/授权文献
- USD297891S Chair frame 公开/授权日：1988-10-04