公开(公告)号：US6130159A

公开(公告)日：2000-10-10

申请号：US365988

申请日：1999-08-03

申请人： Sien G. Kang ,  John Y. Adachi ,  David Badt ,  Edward L. Sill ,  Hector Velasco

发明人： Sien G. Kang ,  John Y. Adachi ,  David Badt ,  Edward L. Sill ,  Hector Velasco

IPC分类号： C23C16/42 ,  C23C16/455 ,  H01L21/285 ,  H01L21/44

CPC分类号： H01L21/28518 ,  C23C16/42 ,  C23C16/455 ,  H01L21/28556

摘要： Processing of substrates in a CVD reactor system wherein tungsten silicide is deposited is accomplished with preflow and postflow of reducing gases before and after deposition steps to ensure that tungsten-rich film is not deposited at the interface of the tungsten silicide film to the substrates or on the tungsten silicide film at the end of deposition processing. For systems having a remote gas injection and flow control system connected by a gas supply manifold to a CVD reactor chamber, an isolation valve is provided in the gas supply manifold, and the valve is held closed during at least a portion of time between deposition sequences.

摘要翻译： 在CVD反应器系统中处理衬底，其中沉积硅化钨是通过在沉积步骤之前和之后的还原气体的预流和后流来实现的，以确保富钨膜不会沉积在硅化钨膜与衬底的界面上或在 硅化钨膜在沉积处理结束时。 对于具有通过气体供应歧管连接到CVD反应器室的远程气体注入和流量控制系统的系统，在气体供应歧管中设置隔离阀，并且在沉积序列之间的至少一段时间内阀被保持关闭 。

公开(公告)号：US5963836A

公开(公告)日：1999-10-05

申请号：US759868

申请日：1996-12-03

申请人： Sien G. Kang ,  John Y. Adachi ,  David Badt ,  Edward L. Sill ,  Hector Velasco

发明人： Sien G. Kang ,  John Y. Adachi ,  David Badt ,  Edward L. Sill ,  Hector Velasco

IPC分类号： C23C16/42 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/44

CPC分类号： H01L21/28518 ,  C23C16/42 ,  C23C16/455

摘要： Processing of substrates in a CVD reactor system wherein tungsten silicide is deposited is accomplished with preflow and postflow of reducing gases before and after deposition steps to ensure that tungsten-rich film is not deposited at the interface of the tungsten silicide film to the substrates or on the tungsten silicide film at the end of deposition processing. For systems having a remote gas injection and flow control system connected by a gas supply manifold to a CVD reactor chamber, an isolation valve is provided in the gas supply manifold, and the valve is held closed during at least a portion of time between deposition sequences.

摘要翻译： 在CVD反应器系统中处理衬底，其中沉积硅化钨是通过在沉积步骤之前和之后的还原气体的预流和后流来实现的，以确保富钨膜不会沉积在硅化钨膜与衬底的界面上或在 硅化钨膜在沉积处理结束时。 对于具有通过气体供应歧管连接到CVD反应器室的远程气体注入和流量控制系统的系统，在气体供应歧管中设置隔离阀，并且在沉积序列之间的至少一段时间内阀被保持关闭 。