公开(公告)号：US6130159A

公开(公告)日：2000-10-10

申请号：US365988

申请日：1999-08-03

申请人： Sien G. Kang ,  John Y. Adachi ,  David Badt ,  Edward L. Sill ,  Hector Velasco

发明人： Sien G. Kang ,  John Y. Adachi ,  David Badt ,  Edward L. Sill ,  Hector Velasco

IPC分类号： C23C16/42 ,  C23C16/455 ,  H01L21/285 ,  H01L21/44

CPC分类号： H01L21/28518 ,  C23C16/42 ,  C23C16/455 ,  H01L21/28556

摘要： Processing of substrates in a CVD reactor system wherein tungsten silicide is deposited is accomplished with preflow and postflow of reducing gases before and after deposition steps to ensure that tungsten-rich film is not deposited at the interface of the tungsten silicide film to the substrates or on the tungsten silicide film at the end of deposition processing. For systems having a remote gas injection and flow control system connected by a gas supply manifold to a CVD reactor chamber, an isolation valve is provided in the gas supply manifold, and the valve is held closed during at least a portion of time between deposition sequences.

摘要翻译： 在CVD反应器系统中处理衬底，其中沉积硅化钨是通过在沉积步骤之前和之后的还原气体的预流和后流来实现的，以确保富钨膜不会沉积在硅化钨膜与衬底的界面上或在 硅化钨膜在沉积处理结束时。 对于具有通过气体供应歧管连接到CVD反应器室的远程气体注入和流量控制系统的系统，在气体供应歧管中设置隔离阀，并且在沉积序列之间的至少一段时间内阀被保持关闭 。

公开(公告)号：US5963836A

公开(公告)日：1999-10-05

申请号：US759868

申请日：1996-12-03

申请人： Sien G. Kang ,  John Y. Adachi ,  David Badt ,  Edward L. Sill ,  Hector Velasco

发明人： Sien G. Kang ,  John Y. Adachi ,  David Badt ,  Edward L. Sill ,  Hector Velasco

IPC分类号： C23C16/42 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/44

CPC分类号： H01L21/28518 ,  C23C16/42 ,  C23C16/455

摘要： Processing of substrates in a CVD reactor system wherein tungsten silicide is deposited is accomplished with preflow and postflow of reducing gases before and after deposition steps to ensure that tungsten-rich film is not deposited at the interface of the tungsten silicide film to the substrates or on the tungsten silicide film at the end of deposition processing. For systems having a remote gas injection and flow control system connected by a gas supply manifold to a CVD reactor chamber, an isolation valve is provided in the gas supply manifold, and the valve is held closed during at least a portion of time between deposition sequences.

摘要翻译： 在CVD反应器系统中处理衬底，其中沉积硅化钨是通过在沉积步骤之前和之后的还原气体的预流和后流来实现的，以确保富钨膜不会沉积在硅化钨膜与衬底的界面上或在 硅化钨膜在沉积处理结束时。 对于具有通过气体供应歧管连接到CVD反应器室的远程气体注入和流量控制系统的系统，在气体供应歧管中设置隔离阀，并且在沉积序列之间的至少一段时间内阀被保持关闭 。

公开(公告)号：US06635570B1

公开(公告)日：2003-10-21

申请号：US09410109

申请日：1999-09-30

申请人： Carl J. Galewski ,  Claude A. Sands ,  Hector Velasco ,  Lawrence Matthysse ,  Thomas E. Seidel

发明人： Carl J. Galewski ,  Claude A. Sands ,  Hector Velasco ,  Lawrence Matthysse ,  Thomas E. Seidel

IPC分类号： H01L214763

CPC分类号： C23C16/56 ,  C23C16/34 ,  C23C16/4404 ,  H01L21/28088 ,  H01L21/28097 ,  H01L21/28556 ,  H01L21/32051

摘要： Improvements to chemical vapor deposition processes are taught for depositing tungsten nitride in semiconductor manufacturing processes. In one irmproved process NF3 is used as a source of nitrogen, and a plasma is introduced under controlled conditions to control particle formation and lower the temperature at which acceptable films may be produced. In another set of processes substantially pure tungsten is produced by rapid thermal annealing of substantially amorphous tungsten nitride at temperatures lower than achieved in the art, by using hydrogen in the ambient atmosphere. In yet another set of new processes particle formation and step coverage enhancement when using NH3 as a nitrogen source is controlled by limiting the pressure at which source gases mix, by unique wall coating technique, and by controlling chamber wall temperature. In still another set of unique processes a graded film on oxide, starting with tungsten silicide quickly grading to tungsten nitride is produced by introducing silane in the NH3 chemistry under controlled conditions.

摘要翻译： 教导了化学气相沉积工艺的改进，用于在半导体制造工艺中沉积氮化钨。 在一个确定的方法中，NF 3用作氮源，并且在受控条件下引入等离子体以控制颗粒形成并降低可生产可接受的膜的温度。 在另一组工艺中，通过在环境气氛中使用氢气，在低于本领域实现的温度下，基本上无定形氮化钨的快速热退火产生基本上纯的钨。 在另一组新工艺中，当使用NH 3作为氮源时，颗粒形成和阶梯覆盖增强是通过限制源气体混合的压力，通过独特的壁涂技术和控制室壁温度来控制的。 在又一组独特的工艺中，通过在受控条件下在NH 3化学中引入硅烷来生产氧化硅上的分级膜，从硅化钨快速分级到氮化钨。