发明授权
US5965461A Controlled linewidth reduction during gate pattern formation using a
spin-on barc
失效
使用旋转棒条在栅极图案形成期间的受控线宽减小
- 专利标题： Controlled linewidth reduction during gate pattern formation using a spin-on barc
- 专利标题（中）： 使用旋转棒条在栅极图案形成期间的受控线宽减小
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申请号： US905109申请日： 1997-08-01
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公开(公告)号： US5965461A公开(公告)日： 1999-10-12
- 发明人: Chih-Yuh Yang , Scott A. Bell , Daniel Steckert
- 申请人： Chih-Yuh Yang , Scott A. Bell , Daniel Steckert
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/311 ; H01L21/3213 ; H01L21/302
摘要：
A gate is formed by depositing a gate conductive layer over a substrate layer, depositing an organic spin-on bottom anti-reflective coating (BARC) over the gate conductive layer, and forming a resist mask on the BARC. Next, the resist mask is controllably etched to further reduce the critical dimensions of gate pattern formed therein, and then the gate is formed by etching the gate conductive layer using the reduced size resist mask.
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