发明授权
- 专利标题： Bipolar Silicon transistor with arsenic and phosphorous ratio
- 专利标题（中）： 双极硅晶体管与砷和磷的比例
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申请号： US623905申请日： 1996-03-27
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公开(公告)号： US5965929A公开(公告)日： 1999-10-12
- 发明人: Klaus Gnannt , Jakob Huber
- 申请人： Klaus Gnannt , Jakob Huber
- 申请人地址： DEX Munich
- 专利权人： Siemens Aktiengesellschaft
- 当前专利权人： Siemens Aktiengesellschaft
- 当前专利权人地址： DEX Munich
- 优先权： DEX19511251 19950327
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/331 ; H01L29/08 ; H01L29/167 ; H01L29/732 ; H01L27/082 ; H01L27/102 ; H01L29/70 ; H01L31/11
摘要：
A bipolar silicon transistor includes at least one emitter zone with n.sup.+ arsenic doping and with a phosphorus doping. The ratio between arsenic dopant concentration and phosphorus dopant concentration is between 10:1 and 500:1 in the at least one emitter zone. The at least one emitter zone may also have a penetration depth of less than 0.5 .mu.m. A method for producing a bipolar silicon transistor includes implanting a n.sup.+ -doped emitter zone with arsenic, implanting the n.sup.+ -doped emitter zone with phosphorus, setting a ratio in the n.sup.+ -doped emitter zone between the arsenic dopant concentration and phosphorus dopant concentration to between 10:1 and 500:1, and annealing crystal defects.
公开/授权文献
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