发明授权
- 专利标题： Quantum effect device, method of manufacturing the same
- 专利标题（中）： 量子效应器件，制造方法
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申请号： US37016申请日： 1998-03-09
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公开(公告)号： US5972744A公开(公告)日： 1999-10-26
- 发明人: Kiyoshi Morimoto , Kiyoyuki Morita , Kiyoshi Araki , Yoshihiko Hirai , Koichiro Yuki
- 申请人： Kiyoshi Morimoto , Kiyoyuki Morita , Kiyoshi Araki , Yoshihiko Hirai , Koichiro Yuki
- 申请人地址： JPX Osaka
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 优先权： JPX8-083675 19960405; JPX8-086176 19960409
- 主分类号： H01L21/335
- IPC分类号： H01L21/335 ; H01L29/775 ; H01L21/70
摘要：
A silicon island portion is formed in a quantum wire so as to be sandwiched between a pair of tunnel barrier portions of a silicon oxide film. On one side of the silicon island portion, a gate electrode for potential control is disposed with a gate insulating film of a silicon oxide film interposed therebetween. On the other side of the silicon island portion, a control electrode for potential control is disposed with an insulating film of a silicon oxide film interposed therebetween. Each of the tunnel barrier portions has a quantum wire constriction structure, which is formed by oxidizing a quantum wire, i.e., a silicon oxide film formed as a field enhanced oxide film with an atomic force microscope or the like, from its surface to a substantially center portion in its section.
公开/授权文献
- USD367347S Beach cart 公开/授权日：1996-02-20
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