发明授权
- 专利标题： Method for forming salicides
- 专利标题（中）： 形成杀螨剂的方法
-
申请号： US489040申请日： 1995-06-09
-
公开(公告)号： US5972790A公开(公告)日： 1999-10-26
- 发明人: Chantal Arena , Robert F. Foster , Joseph T. Hillman , Michael S. Ameen , Jacques Faguet
- 申请人： Chantal Arena , Robert F. Foster , Joseph T. Hillman , Michael S. Ameen , Jacques Faguet
- 申请人地址： JPX Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JPX Tokyo
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; C23C16/42 ; C23C16/50 ; H01L21/28 ; H01L21/285 ; H01L21/336 ; H01L21/4763
摘要：
Titanium is deposited onto a semiconductor interconnect to form a salicide structure by plasma-enhanced chemical vapor deposition. The reactant gases, including titanium tetrachloride, hydrogen and optionally argon, are combined. A plasma is created using RF energy and the plasma contacts the rotating semiconductor material. This causes titanium to be deposited which reacts with exposed silicon to form titanium silicide without any subsequent anneal. Other titanium deposited on the surface, as well as titanium-rich silicon compositions (TiSi.sub.X wherein X is
信息查询
IPC分类:
