A semiconductor component, which comprises a pn junction, where both the p-conducting and the n-conducting layers of the pn junction constitute doped silicon carbide layers and where the edge of at least one of the conducting layers of the pn junction, exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.